DCP69-25-13 Datasheet DCP69-16-13, DCP69-25-13 | P1-P3

DCP69/-16/-25

Document number: DS30798 Rev. 7 - 2

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www.diodes.com

April 2012

DCP69/-16/-25

20V PNP SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Complementary NPN Type Available (DCP68)

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Totally Lead-Free & Fully RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT223

• Case Material: Molded Plastic, "Green Molding” Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish - Matte Tin

• Solderable per MIL-STD -202, Method 208

• Weight: 0.112 grams (approximate)

Ordering Information (Note 3)

Part Number

Marking Reel size (inches) Tape width (mm) Quantity per reel

DCP69-13 P12 13 12 2500

DCP69-16-13 P12-16 13 12 2500

DCP69-25-13 P12-25 13 12 2500

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View

Device Schematic

Top View

Pin Out Confi

g

uration

xxx = Product Type Marking Code

P12 = DCP69

P12-16 = DCP69-16

P12-25 = DCP69-25

= Manufacturer’s code marking

YWW = Date Code Marking

Y = Last digit of year (ex: 1 = 2011)

WW = Week code (01 – 53)

xxx

Y

W

C

E

B

SOT223

DCP69/-16/-25

Document number: DS30798 Rev. 7 - 2

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www.diodes.com

April 2012

DCP69/-16/-25

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Units

Collector-Base Voltage

V

CBO

-25 V

Collector-Emitter Voltage

V

CEO

-20 V

Emitter-Base Voltage

V

EBO

-5.0 V

Collector Current

I

C

-1.0 A

Peak Pulse Current

I

CM

-2.0 A

Thermal Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 4)

P

D

1 W

Thermal Resistance, Junction to Ambient Air (Note 4)

R

θ

JA

125 °C/W

Power Dissipation (Note 5)

P

D

2 W

Thermal Resistance, Junction to Ambient Air (Note 5)

R

θ

JA

62.5 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150 °C

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

BV

CBO

-25 — — V

I

C

= -100μA, I

E

= 0

Collector-Emitter Breakdown Voltage (Note 6)

BV

CEO

-20 — — V

I

C

= -10mA, I

B

= 0

Emitter-Base Breakdown Voltage

BV

EBO

-5.0 — — V

I

E

= -100μA, I

C

= 0

Collector-Base Cutoff Current

I

CBO

— —

-100

-10

nA

μA

V

CB

= -25V, I

E

= 0

V

CB

= -25V, I

E

= 0, T

A

= 150°C

Emitter-Base Cutoff Current

I

EBO

— — -100 nA

V

EB

= -5.0V, I

C

= 0

ON CHARACTERISTICS (Note 6)

DC Current Gain

DCP69, DCP69-16, DCP69-25

h

FE

50

60

—

V

CE

= -10V, I

C

= -5.0mA

V

CE

= -1.0V, I

C

= -1.0A

DCP69 85 — 375

V

CE

= -1.0V, I

C

= -500mA

DCP69-16 100 — 250

V

CE

= -1.0V, I

C

= -500mA

DCP69-25 160 — 375

V

CE

= -1.0V, I

C

= -500mA

Collector-Emitter Saturation Voltage

V

CE

(

sat

)

— — -0.5 V

I

C

= -1.0A, I

B

= -100mA

Base-Emitter Turn-On Voltage

V

BE (on)

— —

-0.7

-1.0

V

CE

= -10V, I

C

= -5.0mA

V

CE

= -1.0V, I

C

= -1.0A

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

f

T

40 200 — MHz

V

CE

= -5.0V, I

C

= -50mA, f = 100MHz

Output Capacitance

C

obo

— 17 — pF

V

CB

= -10V, f = 1 MHz

Notes: 4. Device mounted on FR-4 PCB; pad layout as shown on in Diodes Inc. suggested pad layout document, which can be found on our website at

http://www.diodes.com

5. Device mounted on FR-4 PCB with 1in.

2

copper pad layout

6. Measured under pulsed conditions. Pulse width = 300μS. Duty cycle ≤ 2%.

DCP69/-16/-25

Document number: DS30798 Rev. 7 - 2

3 of 5

www.diodes.com

April 2012

DCP69/-16/-25

0

0.4

0.8

25 50

75

100 125

150

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N

(mW)

D

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Dissipation vs. Ambient Temperature

A

1.2

1.6

2.0

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

012345678910

-V , COLLECTOR EMITTER VOLTAGE (V)

CE

-I ,

C

O

LLE

C

T

O

R

C

U

R

E

N

T

(A)

C

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage

I = -2mA

B

I = -4mA

B

I = -6mA

B

I = -8mA

B

I = -10mA

B

0

50

100

150

200

250

300

350

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

h, D

C

U

R

EN

T

G

AIN

FE

Fig. 3 Typical DC Current Gain

vs. Collector Current (DCP69-16)

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V = -1V

CE

0

0.1

0.2

0.3

0.4

0.5

0.6

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

-V ,

C

O

LLE

C

T

O

R

-EMI

T

E

R

SATURATION VOLTAGE (V)

CE(SAT)

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

I/I = 10

CB

0

0.2

0.4

0.6

0.8

1.0

1.2

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

-V , BASE-EMI

T

E

R

T

U

R

N-

O

N V

O

L

T

A

G

E (V)

BE(ON)

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V = -1V

CE

0

0.2

0.4

0.6

0.8

1.0

1.2

0.001 0.01 0.1 1 10

-I , COLLECTOR CURRENT (A)

C

-V , BASE-EMI

T

E

R

SA

T

U

R

A

T

I

O

N

V

O

L

T

A

G

E (V)

BE(SAT)

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

I/I = 10

CB

DCP69-25-13

DCP69-25-13

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