REV. B
–4–
OP200–SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
OP200E OP200G
Parameter Symbol Conditions Min Typ Max Min Typ Max Unit
Input Offset Voltage V
OS
35 100 110 300 µV
Average Input Offset
Voltage Drift TCV
OS
0.2 0.5 0.6 2.0 µV/°C
Input Offset Current I
OS
V
CM
= 0 V 0.08 2.5 0.1 6.0 nA
Input Bias Current I
B
V
CM
= 0 V 0 3 5.0 0.5 10.0 nA
Large-Signal V
O
= ±10 V
Voltage Gain A
VO
R
L
= 10 k 3000 10000 2000 5000 V/mV
R
L
= 2 k 1500 3200 1000 2500 V/mV
Input Voltage
Range* IVR ±12 ±12.5 ±12 ±12.5 V
Common-Mode
Rejection CMR V
CM
= ±12 V 115 130 105 130 dB
Power Supply PSRR V
S
= ±3 V 0.15 3.2 0.3 10.0 µV/V
Rejection Ratio to ±18 V
Output Voltage V
O
R
L
= 10 kΩ±12 ±12.4 ±12 ±12.4 V
Swing R
L
= 2 kΩ±11 ±12 ±11 ±12.2 V
Supply Current
Per Amplifier I
SY
No Load 600 775 600 775 µA
Capacitive Load A
V
= 1 10 10 nF
Stability No Oscillations 10 10 nF
*Guaranteed by CMR test.
Specifications subject to change without notice.
(V
S
= ±15 V, –40C T
A
+85C, unless otherwise noted.)
REV. B
OP200
–5–
ORDERING GUIDE
Package
T
A
= 25C Operating
V
OS
Max CERDIP Temperature
(V) 8-Lead Plastic Range
75 OP200AZ MIL
75 OP200EZ XIND
200 OP200GP XIND
200 OP200GS XIND
200 OP200GS-REEL XIND
For military processed devices, please refer to the Standard
Microcircuit Drawing (SMD) available at
www.dscc.dla.mil/programs/milspec/default.asp
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20 V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ±30 V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage
Output Short-Circuit Duration . . . . . . . . . . . . . . Continuous
Storage Temperature Range
P, S, Z-Package . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . 300°C
Junction Temperature (T
J
) . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
OP200A . . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C
OP200E . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
OP200G . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
Package Type
JA
2
JC
Unit
8-Lead CERDIP (Z) 148 16 °C/W
8-Lead Plastic DIP (P) 96 37 °C/W
16-Lead SOIC (S) 92 27 °C/W
NOTES
1
Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2
JA
is specified for worst-case mounting conditions, i.e.,
JA
is specified for
device in socket for CERDIP and PDIP packages;
JA
is specified for device
soldered to printed circuit board for SOIC package.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the OP200 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
SMD Part Number ADI Equivalent
5962-8859301M2A OP200ARCMDA
5962-8859301MPA OP200AZMDA
1/2
OP200
CHANNEL SEPARATION = 20 LOG
V
1
1/2
OP200
V
2
50
50k
20Vp-p
@ 10Hz
V
1
V
2
/1000
Figure 2. Channel Separation Test Circuit
1/2
OP200
e
OUT
1/2
OP200
10k100
e
OUT
(nV/ Hz) = 2 e
OUT
(nV/ Hz) 101
TO SPECTRUM
ANALYZER
Figure 3. Noise Test Schematic
REV. B
OP200
–6–
–75
10
0
TEMPERATURE – C
INPUT OFFSET VOLTAGE – V
V
S
= 15V
–50 –25 0 25 50 75 100 125
20
30
40
50
60
TPC 2. Input Offset Voltage
vs. Temperature
–15
0.2
0
COMON-MODE VOLTAGE – V
INPUT BIAS CURRENT – nA
T
A
= 25C
V
S
= 15V
–10 –5 0 5 10 15
0.4
0.6
0.8
1.0
TPC 5. Input Bias Current vs.
Common-Mode Voltage
FREQUENCY – Hz
CURRENT NOISE DENSITY – fA/ Hz
1000
10 1k100
100
T
A
= 25C
V
S
= 15V
1
TPC 8. Current Noise Density
vs. Frequency
–Typical Performance Characteristics
TIME – Minutes
5
0
1
CHANGE IN OFFSET VOLTAGE – V
2
12345
T
A
= 25C
V
S
= 15V
TPC 1. Warm-Up Drift
–75
50
300
250
200
100
150
0
TEMPERATURE – C
INPUT OFFSET CURRENT – pA
V
S
= 15V
–50 –25 0 25 50 75 100 125
TPC 4. Input Offset Current vs.
Temperature
FREQUENCY – Hz
VOLTAGE NOISE DENSITY – nV/ Hz
10
1 10010
100
1k
T
A
= 25C
V
S
= 15V
TPC 7. Voltage Noise Density
vs. Frequency
–75
0
2
–2
TEMPERATURE – C
INPUT BIAS CURRENT – nA
V
S
= 15V
–50 –25 0 25 50 75 100 125
–3
3
1
–1
TPC 3. Input Bias Current vs.
Temperature
FREQUENCY – Hz
COMMON-MODE REJECTION – dB
0
1
20
40
60
80
100
120
140
10 100 1k 10k 100k
T
A
= 25C
V
S
= 15V
TPC 6. Common-Mode Rejection
vs. Frequency
TPC 9. 0.1 to 10 Hz Noise

OP200GS

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Operational Amplifiers - Op Amps Low Offset Low Power Mono Dual
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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