OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

74AUP1G34GW-Q100H

P1-P3P4-P6P7-P9P10-P12P13-P15
74AUP1G34_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 26 March 2013 6 of 14
NXP Semiconductors 74AUP1G34-Q100
Low-power buffer
[1] One input at V
CC
0.6 V, other input at V
CC
or GND.
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
--0.9A
I
CC
additional supply current V
I
= V
CC
0.6 V; I
O
= 0 A;
V
CC
=3.3V
[1]
--50A
T
amb
= 40 C to +125 C
V
IH
HIGH-level input voltage V
CC
= 0.8 V 0.75 V
CC
-- V
V
CC
= 0.9 V to 1.95 V 0.70 V
CC
-- V
V
CC
= 2.3 V to 2.7 V 1.6 - - V
V
CC
= 3.0 V to 3.6 V 2.0 - - V
V
IL
LOW-level input voltage V
CC
= 0.8 V - - 0.25 V
CC
V
V
CC
= 0.9 V to 1.95 V - - 0.30 V
CC
V
V
CC
= 2.3 V to 2.7 V - - 0.7 V
V
CC
= 3.0 V to 3.6 V - - 0.9 V
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 0.8 V to 3.6 V V
CC
0.11 - - V
I
O
= 1.1 mA; V
CC
= 1.1 V 0.6 V
CC
-- V
I
O
= 1.7 mA; V
CC
= 1.4 V 0.93 - - V
I
O
= 1.9 mA; V
CC
= 1.65 V 1.17 - - V
I
O
= 2.3 mA; V
CC
= 2.3 V 1.77 - - V
I
O
= 3.1 mA; V
CC
= 2.3 V 1.67 - - V
I
O
= 2.7 mA; V
CC
= 3.0 V 2.40 - - V
I
O
= 4.0 mA; V
CC
= 3.0 V 2.30 - - V
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 0.8 V to 3.6 V - - 0.11 V
I
O
= 1.1 mA; V
CC
= 1.1 V - - 0.33 V
CC
V
I
O
= 1.7 mA; V
CC
= 1.4 V - - 0.41 V
I
O
= 1.9 mA; V
CC
= 1.65 V - - 0.39 V
I
O
= 2.3 mA; V
CC
= 2.3 V - - 0.36 V
I
O
= 3.1 mA; V
CC
= 2.3 V - - 0.50 V
I
O
= 2.7 mA; V
CC
= 3.0 V - - 0.36 V
I
O
= 4.0 mA; V
CC
= 3.0 V - - 0.50 V
I
I
input leakage current V
I
= GND to 3.6 V; V
CC
= 0 V to 3.6 V - - 0.75 A
I
OFF
power-off leakage current V
I
or V
O
= 0 V to 3.6 V; V
CC
= 0 V - - 0.75 A
I
OFF
additional power-off
leakage current
V
I
or V
O
= 0 V to 3.6 V;
V
CC
=0Vto0.2V
--0.75 A
I
CC
supply current V
I
= GND or V
CC
; I
O
= 0 A;
V
CC
= 0.8 V to 3.6 V
--1.4A
I
CC
additional supply current V
I
= V
CC
0.6 V; I
O
= 0 A;
V
CC
=3.3V
[1]
--75A
Table 7. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
74AUP1G34_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 26 March 2013 7 of 14
NXP Semiconductors 74AUP1G34-Q100
Low-power buffer
11. Dynamic characteristics
Table 8. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
(85 C)
Min Max
(125 C)
C
L
= 5 pF
t
pd
propagation
delay
A to Y; see Figure 5
[2]
V
CC
= 0.8 V - 15.0 - - - - - ns
V
CC
= 1.1 V to 1.3 V 2.6 4.7 9.2 2.0 10.0 2.0 11.0 ns
V
CC
= 1.4 V to 1.6 V 2.1 3.4 5.7 1.6 6.5 1.6 7.2 ns
V
CC
= 1.65 V to 1.95 V 1.8 2.9 4.5 1.4 5.2 1.4 5.8 ns
V
CC
= 2.3 V to 2.7 V 1.5 2.3 3.5 1.2 4.2 1.2 4.6 ns
V
CC
= 3.0 V to 3.6 V 1.4 2.1 3.2 1.0 3.8 1.0 4.2 ns
C
L
= 10 pF
t
pd
propagation
delay
A to Y; see Figure 5
[2]
V
CC
= 0.8 V - 18.4 - - - - - ns
V
CC
= 1.1 V to 1.3 V 3.2 5.6 10.9 2.3 11.8 2.3 13.1 ns
V
CC
= 1.4 V to 1.6 V 2.6 4.1 6.7 1.9 7.7 1.9 8.5 ns
V
CC
= 1.65 V to 1.95 V 2.3 3.4 5.3 1.7 6.2 1.7 6.9 ns
V
CC
= 2.3 V to 2.7 V 2.0 2.9 4.2 1.5 5.0 1.5 5.5 ns
V
CC
= 3.0 V to 3.6 V 1.7 2.6 3.8 1.4 4.6 1.4 5.1 ns
C
L
= 15 pF
t
pd
propagation
delay
A to Y; see Figure 5
[2]
V
CC
= 0.8 V - 21.9 - - - - - ns
V
CC
= 1.1 V to 1.3 V 3.6 6.4 12.6 2.6 13.8 2.6 15.2 ns
V
CC
= 1.4 V to 1.6 V 3.0 4.6 7.6 2.2 8.9 2.2 9.8 ns
V
CC
= 1.65 V to 1.95 V 2.6 3.9 6.0 2.0 7.2 2.0 7.9 ns
V
CC
= 2.3 V to 2.7 V 2.3 3.3 4.8 1.8 5.7 1.8 6.3 ns
V
CC
= 3.0 V to 3.6 V 2.1 3.1 4.2 1.6 5.0 1.6 5.5 ns
C
L
= 30 pF
t
pd
propagation
delay
A to Y; see Figure 5
[2]
V
CC
= 0.8 V - 32.1 - - - - - ns
V
CC
= 1.1 V to 1.3 V 4.8 8.7 16.3 3.6 18.9 3.6 20.8 ns
V
CC
= 1.4 V to 1.6 V 4.0 6.2 10.3 3.4 12.2 3.4 13.4 ns
V
CC
= 1.65 V to 1.95 V 3.6 5.2 8.1 3.2 9.8 3.2 10.8 ns
V
CC
= 2.3 V to 2.7 V 3.0 4.4 6.4 2.7 7.7 2.7 8.5 ns
V
CC
= 3.0 V to 3.6 V 2.9 4.2 5.6 2.5 6.5 2.5 7.2 ns
74AUP1G34_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 26 March 2013 8 of 14
NXP Semiconductors 74AUP1G34-Q100
Low-power buffer
[1] All typical values are measured at nominal V
CC
.
[2] t
pd
is the same as t
PLH
and t
PHL
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of outputs.
12. Waveforms
C
PD
power
dissipation
capacitance
f
i
= 1 MHz;
V
I
=GNDtoV
CC
[3]
V
CC
= 0.8 V - 2.5 - - - - - pF
V
CC
= 1.1 V to 1.3 V - 2.6 - - - - - pF
V
CC
= 1.4 V to 1.6 V - 2.7 - - - - - pF
V
CC
= 1.65 V to 1.95 V - 2.9 - - - - - pF
V
CC
= 2.3 V to 2.7 V - 3.4 - - - - - pF
V
CC
= 3.0 V to 3.6 V - 4.0 - - - - - pF
Table 8. Dynamic characteristics
…continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6.
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
(85 C)
Min Max
(125 C)
Measurement points are given in Table 9.
Logic levels: V
OL
and V
OH
are typical output voltage levels that occur with the output load.
Fig 5. The data input (A) to output (Y) propagation delays
Table 9. Measurement points
Supply voltage Output Input
V
CC
V
M
V
M
V
I
t
r
= t
f
0.8 V to 3.6 V 0.5 V
CC
0.5 V
CC
V
CC
3.0 ns
P1-P3P4-P6P7-P9P10-P12P13-P15

74AUP1G34GW-Q100H

Mfr. #:
Buy 74AUP1G34GW-Q100H
Manufacturer:
Nexperia
Description:
Buffers & Line Drivers Low-power buffer
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet