BC639G Datasheet BC639G, BC637RL1G, BC637G | P1-P3

February, 2011 − Rev. 1

1 Publication Order Number:

BC637/D

BC637, BC639, BC639-16

High Current Transistors

NPN Silicon

Features

• These are Pb−Free Devices*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector - Emitter Voltage

BC637

BC639

V

CEO

60

80

Vdc

Collector - Base Voltage

BC637

BC639

V

CBO

60

80

Vdc

Emitter - Base Voltage V

EBO

5.0 Vdc

Collector Current − Continuous I

C

1.0 Adc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

800

12

mW

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

200 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

COLLECTOR

2

3

BASE

1

EMITTER

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

1

2

3

1

2

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

3

TO−92

CASE 29

STYLE 14

x = 7 or 9

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAMS

BC63

9−16

AYWW G

G

BC

63x

AYWW G

G

BC637, BC639, BC639−16

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage (Note 1)

(I

C

= 10 mAdc, I

B

= 0) BC637

BC639

V

(BR)CEO

60

80

−

Vdc

Collector − Emitter Zero−Gate Breakdown Voltage(Note 1)

(I

C

= 100 mAdc, I

B

= 0) BC639−16

V

(BR)CES

120 − −

Vdc

Collector − Base Breakdown Voltage

(I

C

= 100 mAdc, I

E

= 0) BC637

BC639

V

(BR)CBO

60

80

−

Vdc

Emitter − Base Breakdown Voltage

(I

E

= 10 mAdc, I

C

= 0)

V

(BR)EBO

5.0 − − Vdc

Collector Cutoff Current

(V

CB

= 30 Vdc, I

E

= 0)

(V

CB

= 30 Vdc, I

E

= 0, T

A

= 125°C)

I

CBO

−

100

10

nAdc

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

C

= 5.0 mAdc, V

CE

= 2.0 Vdc)

(I

C

= 150 mAdc, V

CE

= 2.0 Vdc) BC637

BC639

BC639−16ZLT1

(I

C

= 500 mA, V

CE

= 2.0 V)

h

FE

25

40

100

25

−

160

250

−

Collector − Emitter Saturation Voltage

(I

C

= 500 mAdc, I

B

= 50 mAdc)

V

CE(sat)

− − 0.5

Vdc

Base − Emitter On Voltage

(I

C

= 500 mAdc, V

CE

= 2.0 Vdc)

V

BE(on)

− − 1.0

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product

(I

C

= 50 mAdc, V

CE

= 2.0 Vdc, f = 100 MHz)

f

T

− 200 −

MHz

Output Capacitance

(V

CB

= 10 Vdc, I

E

= 0, f = 1.0 MHz)

C

ob

− 7.0 −

pF

Input Capacitance

(V

EB

= 0.5 Vdc, I

C

= 0, f = 1.0 MHz)

C

ib

− 50 −

pF

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.

ORDERING INFORMATION

Device Package Shipping

†

BC637G TO−92

(Pb−Free)

5000 Units / Bulk

BC637RL1G TO−92

(Pb−Free)

2000 / Tape & Reel

BC639G TO−92

(Pb−Free)

5000 Units / Bulk

BC639RL1G TO−92

(Pb−Free)

2000 / Tape & Reel

BC639ZL1G TO−92

(Pb−Free)

2000 / Ammo Box

BC639−16ZL1G TO−92

(Pb−Free)

2000 / Ammo Box

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

BC637, BC639, BC639−16

http://onsemi.com

3

I

C

, COLLECTOR CURRENT (mA)

h

FE

, DC CURRENT GAIN

f, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

T

V, VOLTAGE (VOLTS)

V

, TEMPERATURE COEFFICIENTS (mV/ C)°θ

1000

1

2

5

10

20

50

100

200

500

1001 2 3 4 5 7 10 20 30 40 50 70

V

CE

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

BC635

BC637

BC639

P

D

T

A

25°C

P

D

T

C

25°C

SOA = 1S

P

D

T

C

25°C

P

D

T

A

25°C

500

200

100

50

20

1 3 5 10 30 50 100 300 500 1000

I

C

, COLLECTOR CURRENT (mA)

Figure 2. DC Current Gain

V

CE

= 2 V

500

300

100

50

20

1 10 100 1000

I

C

, COLLECTOR CURRENT (mA)

Figure 3. Current−Gain — Bandwidth Product

V

CE

= 2 V

1

0.8

0.6

0.4

0.2

0

1 10 100 1000

I

C

, COLLECTOR CURRENT (mA)

Figure 4. “Saturation” and “On” Voltages

V

BE(sat)

@ I

C

/I

B

= 10

V

BE(on)

@ V

CE

= 2 V

V

CE(sat)

@ I

C

/I

B

= 10

-0.2

-1.0

-2.2

-1.6

1 3 5 10 30 50 100 300 500 1000

I

C

, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

V

CE

= 2 VOLTS

DT = 0°C to +100°C

q

V

for V

BE

BC639G

BC639G

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