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H11D13S

P1-P3P4-P6P7-P8
Parameter Symbol Value Units
TOTAL DEVICE
T
STG
-55 to +150 °C
Storage Temperature
Operating Temperature T
OPR
-55 to +100 °C
Lead Solder Temperature T
SOL
260 for 10 sec °C
Total Device Power Dissipation @ T
A
= 25°C
P
D
260 mW
Derate above 25°C 3.5 mW/°C
EMITTER
I
F
80 mA
*Forward DC Current
*Reverse Input Voltage V
R
6.0 V
*Forward Current - Peak (1µs pulse, 300pps) I
F
(pk) 3.0 A
*LED Power Dissipation @ T
A
= 25°C
P
D
150 mW
Derate above 25°C 1.41 mW/°C
FEATURES
• High Voltage
- H11D1, H11D2, BV
CER
= 300 V
- H11D3, H11D4, BV
CER
= 200 V
• High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
• Underwriters Laboratory (UL) recognized File# E90700
DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
8/9/00 200046A
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6
BASE
N/C
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
H11D1
H11D2
H11D3
H11D4
4N38
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
• Appliance sensor systems
• Industrial controls
ABSOLUTE MAXIMUM RATINGS
8/9/00 200046A
H11D1, H11D2, H11D3, H11D4, 4N38
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at T
A
= 25°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C
Unless otherwise specified.)
Characteristic Test Conditions Symbol Device Min Typ** Max Unit
EMITTER
(I
F
= 10 mA) V
F
ALL 1.15 1.5 V
*Forward Voltage
Forward Voltage Temp. !V
F
ALL -1.8 mV/°C
Coefficient !T
A
Reverse Breakdown Voltage (I
R
= 10 µA) BV
R
ALL 6 25 V
Junction Capacitance
(V
F
= 0 V, f = 1 MHz)
C
J
ALL 50 pF
(V
F
= 1 V, f = 1 MHz) ALL 65 pF
*Reverse Leakage Current (V
R
= 6 V) I
R
ALL 0.05 10 µA
DETECTOR (R
BE
= 1 M")
BV
CER
H11D1/2 300
*Breakdown Voltage (I
C
= 1.0 mA, I
F
= 0) H11D3/4 200
Collector to Emitter (No R
BE
) (I
C
= 1.0 mA) BV
CEO
4N38 80
H11D1/2 300
V
*Collector to Base (I
C
= 100 µA, I
F
= 0) BV
CBO
H11D3/4 200
4N38 80
Emitter to Base
(I
E
= 100 µA , I
F
= 0)
BV
EBO
4N38 7
Emitter to Collector BV
ECO
ALL 7 10
(V
CE
= 200 V, I
F
= 0, T
A
= 25°C)
H11D1/2
100 nA
*Leakage Current (V
CE
= 200 V, I
F
= 0, T
A
= 100°C)
I
CER
250 µA
Collector to Emitter (V
CE
= 100 V, I
F
= 0, T
A
= 25°C)
H11D3/4
100 nA
(R
BE
= 1 M")(V
CE
= 100 V, I
F
= 0, T
A
= 100°C) 250 µA
(No R
BE
) (V
CE
= 60 V, I
F
= 0, T
A
= 25°C) I
CEO
4N38 50 nA
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter Symbol Value Units
DETECTOR
300 mW
*Power Dissipation @ T
A
= 25°CP
D
Derate linearly above 25°C 4.0 mW/°C
H11D1 - H11D2 300
*Collector to Emitter Voltage H11D3 - H11D4 V
CER
200
4N38 80
H11D1 - H11D2 300
V
*Collector Base Voltage H11D3 - H11D4 V
CBO
200
4N38 80
*Emitter to Collector Voltage
H11D1 - H11D2
V
ECO
7
H11D3 - H11D4
Collector Current (Continuous) 100 mA
ABSOLUTE MAXIMUM RATINGS (Cont.)
V
CE
- COLLECTOR VOLTAGE (V)
NORMALIZED I
CER
- OUTPUT CURRENT
Fig.2 Normalized Output Characteristics
0.1 1 10 100
0.01
0.1
1
10
Normalized to:
V
CE
= 10 V
I
F
= 10 mA
R
BE
= 10
6
Ω
T
A
= 25˚C
I
F
= 50 mA
I
F
= 5 mA
I
F
= 10 mA
I
F
- LED FORWARDCURRENT (mA)
V
F
- FORWARD VOLTAGE (V)
Fig.1 LED Forward Voltage vs. Forward Current
1 10 100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
T
A
= 55˚C
T
A
= 25˚C
T
A
= 100˚C
8/9/00 200046A
H11D1, H11D2, H11D3, H11D4, 4N38
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
DC Characteristic Test Conditions Symbol Device Min Typ** Max Unit
EMITTER H11D1
Current Transfer Ratio
(I
F
= 10 mA, V
CE
= 10 V) H11D2 2 (20)
Collector to Emitter
(R
BE
= 1 M") CTR H11D3 mA (%)
H11D4 1 (10)
(I
F
= 10 mA, V
CE
= 10 V) 4N38 2 (20)
(I
F
= 10 mA, I
C
= 0.5 mA)
H11D1/2/3/4 0.1 0.40
*Saturation Voltage (R
BE
= 1 M")V
CE (SAT)
V
(I
F
= 20 mA, I
C
= 4 mA) 4N38 1.0
TRANSFER CHARACTERISTICS
Characteristic Test Conditions Symbol Device Min Typ** Max Unit
SWITCHING TIMES
(V
CE
=10 V, I
CE
= 2 mA) t
on
ALL 5
Non-Saturated Turn-on Time µs
Turn-off Time (R
L
= 100 ") t
off
ALL 5
TRANSFER CHARACTERISTICS
Characteristic Test Conditions Symbol Device Min Typ** Max Unit
Isolation Voltage (I
I-O
#$1 µA, 1 min.) V
ISO
ALL
5300 (V
AC
RMS)
7500 (V
AC
PEAK)
Isolation Resistance (V
I-O
= 500 VDC) R
ISO
ALL 10
11
"
Isolation Capacitance (f = 1 MHz) C
ISO
ALL 0.5 pF
ISOLATION CHARACTERISTICS
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at T
A
= 25°C
P1-P3P4-P6P7-P8

H11D13S

Mfr. #:
Buy H11D13S
Manufacturer:
ON Semiconductor / Fairchild
Description:
Transistor Output Optocouplers Hi Volt Optocoupler Phototransistor
Lifecycle:
New from this manufacturer.
Delivery:
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