8/9/00 200046A
H11D1, H11D2, H11D3, H11D4, 4N38
HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS
Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at T
A
= 25°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C
Unless otherwise specified.)
Characteristic Test Conditions Symbol Device Min Typ** Max Unit
EMITTER
(I
F
= 10 mA) V
F
ALL 1.15 1.5 V
*Forward Voltage
Forward Voltage Temp. !V
F
ALL -1.8 mV/°C
Coefficient !T
A
Reverse Breakdown Voltage (I
R
= 10 µA) BV
R
ALL 6 25 V
Junction Capacitance
(V
F
= 0 V, f = 1 MHz)
C
J
ALL 50 pF
(V
F
= 1 V, f = 1 MHz) ALL 65 pF
*Reverse Leakage Current (V
R
= 6 V) I
R
ALL 0.05 10 µA
DETECTOR (R
BE
= 1 M")
BV
CER
H11D1/2 300
*Breakdown Voltage (I
C
= 1.0 mA, I
F
= 0) H11D3/4 200
Collector to Emitter (No R
BE
) (I
C
= 1.0 mA) BV
CEO
4N38 80
H11D1/2 300
V
*Collector to Base (I
C
= 100 µA, I
F
= 0) BV
CBO
H11D3/4 200
4N38 80
Emitter to Base
(I
E
= 100 µA , I
F
= 0)
BV
EBO
4N38 7
Emitter to Collector BV
ECO
ALL 7 10
(V
CE
= 200 V, I
F
= 0, T
A
= 25°C)
H11D1/2
100 nA
*Leakage Current (V
CE
= 200 V, I
F
= 0, T
A
= 100°C)
I
CER
250 µA
Collector to Emitter (V
CE
= 100 V, I
F
= 0, T
A
= 25°C)
H11D3/4
100 nA
(R
BE
= 1 M")(V
CE
= 100 V, I
F
= 0, T
A
= 100°C) 250 µA
(No R
BE
) (V
CE
= 60 V, I
F
= 0, T
A
= 25°C) I
CEO
4N38 50 nA
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter Symbol Value Units
DETECTOR
300 mW
*Power Dissipation @ T
A
= 25°CP
D
Derate linearly above 25°C 4.0 mW/°C
H11D1 - H11D2 300
*Collector to Emitter Voltage H11D3 - H11D4 V
CER
200
4N38 80
H11D1 - H11D2 300
V
*Collector Base Voltage H11D3 - H11D4 V
CBO
200
4N38 80
*Emitter to Collector Voltage
H11D1 - H11D2
V
ECO
7
H11D3 - H11D4
Collector Current (Continuous) 100 mA
ABSOLUTE MAXIMUM RATINGS (Cont.)