DSS5320T-7 Datasheet DSS5320T-7 | P1-P3

DSS5320T

Document number: DS31620 Rev. 2 - 2

1 of 5

www.diodes.com

October 2010

DSS5320T

20V LOW V

CE(sat)

PNP SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideal for Medium Power Amplification and Switching

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT-23

• Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish — Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DSS5320T-7 ZP4 7 8mm 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015 2016

Code W X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

ZP4 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: V = 2008)

M = Month (ex: 9 = September)

ZP4

YM

Top View

Device S

y

mbol Pin-Out To

p

SOT-23

E

B

C

E

B

C

DSS5320T

Document number: DS31620 Rev. 2 - 2

2 of 5

www.diodes.com

October 2010

DSS5320T

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

-20 V

Collector-Emitter Voltage

V

CEO

-20 V

Emitter-Base Voltage

V

EBO

-5 V

Peak Pulse Current

I

CM

-5 A

Repetitive Peak Pulse Current (Note 4)

I

CRP

-3 A

Continuous Collector Current

I

C

-2 A

Base Current

I

B

-0.5 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 5) @ T

A

= 25°C P

D

600 mW

Thermal Resistance, Junction to Ambient Air (Note 4) @ T

A

= 25°C

R

θ

JA

209 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150 °C

Notes: 4. Operated under pulsed conditions: pulse width ≤100ms, duty cycle ≤ 0.25.

5. Device mounted on 15mm x 15mm x1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

0

0.2

0.4

0.6

0.8

050100150200

T , AMBIENT TEMPERATURE ( C)

A

°

Fig. 1 Power Dissipation vs. Ambient Temperature

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N (W)

D

R°C/W

θ

JA

= 209

0.1 1 10 100

V , COLLECTOR EMITTER VOLTAGE (V)

Fig. 2 Safe Operating Area

CE

0.001

0.01

0.1

1

100

I,

C

O

LLE

C

T

O

R

C

U

R

E

N

T

(A)

C

10

DSS5320T

Document number: DS31620 Rev. 2 - 2

3 of 5

www.diodes.com

October 2010

DSS5320T

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Conditions

Collector-Base Cutoff Current

I

CBO

⎯ ⎯

-100

nA

V

CB

= -20V, I

E

= 0

⎯ ⎯

-50

μA

V

CB

= -20V, I

E

= 0, T

A

= 150°C

Emitter-Base Cutoff Current

I

EBO

⎯ ⎯

-100 nA

V

EB

= -5V, I

C

= 0

Collector-Base Breakdown Voltage

BV

CBO

-20

⎯ ⎯

V

I

C

= -100μA

Collector-Emitter Breakdown Voltage (Note 6)

BV

CEO

-20

⎯ ⎯

V

I

C

= -10mA

Emitter-Base Breakdown Voltage

BV

EBO

-5

⎯ ⎯

V

I

E

= -100μA

DC Current Gain (Note 5)

h

FE

220

⎯ ⎯

⎯

V

CE

= -2V, I

C

= -0.1A

220

⎯ ⎯

V

CE

= -2V, I

C

= -0.5A

200

⎯ ⎯

V

CE

= -2V, I

C

= -1A

150

⎯ ⎯

V

CE

= -2V, I

C

= -2A

100

⎯ ⎯

V

CE

= -2V, I

C

= -3A

Collector-Emitter Saturation Voltage (Note 6)

V

CE(sat)

⎯ ⎯

-70

mV

I

C

= -0.5A, I

B

= -50mA

⎯ ⎯

-130

I

C

= -1A, I

B

= -50mA

⎯ ⎯

-230

I

C

= -2A, I

B

= -100mA

⎯ ⎯

-210

I

C

= -2A, I

B

= -200mA

⎯ ⎯

-300

I

C

= -3A, I

B

= -300mA

Equivalent On-Resistance

R

CE

(

sat

)

⎯ ⎯

105

mΩ

I

E

= -2A, I

B

= -200mA

Base-Emitter Saturation Voltage

V

BE(sat)

⎯ ⎯

-1.1 V

I

C

= -2A, I

B

= -100mA

⎯ ⎯

-1.2 V

I

C

= -3A, I

B

= -300mA

Base-Emitter Turn-on Voltage

V

BE

(

on

)

⎯ ⎯

-1.2 V

V

CE

= -2V, I

C

= -1A

Transition Frequency

f

T

100 180

⎯

MHz

V

CE

= -5V, I

C

= -100mA,

f = 100MHz

Output Capacitance

C

ob

⎯

25 50 pF

V

CB

= -10V, f = 1MHz

Turn-On Time

t

on

⎯

67

⎯

ns

V

CC

= -10V, I

C

= -1A,

I

B1

= -I

B2

= -50mA

Delay Time

t

d

⎯

23

⎯

ns

Rise Time

t

r

⎯

44

⎯

ns

Turn-Off Time

t

off

⎯

224

⎯

ns

Storage Time

t

s

⎯

184

⎯

ns

Fall Time

t

f

⎯

40

⎯

ns

Notes: 6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

01 2 3 45

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage

I = 5mA

B

I,

C

O

LLE

C

T

O

R

C

U

R

ENT (A)

C

I = 4mA

B

I = 3mA

B

I = 2mA

B

I = 1mA

B

0.001 0.01 0.1 1 10

I , COLLECTOR CURRENT (A)

C

Fig. 4 Typical DC Current Gain vs. Collector Current

0

100

200

300

400

500

600

700

800

900

1,000

h, D

C

U

R

EN

T

G

AIN

FE

T = -55°C

A

V = -2V

CE

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

DSS5320T-7

DSS5320T-7

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