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VS-112MT80KPBF

P1-P3P4-P6P7-P8
VS-90-110MT.KPbF Series
www.vishay.com
Vishay Semiconductors
Revision: 17-Aug-17
4
Document Number: 94352
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 6 - Current Ratings Characteristics Fig. 7 - Forward Voltage Drop Characteristics
Fig. 8 - Total Power Loss Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current Fig. 10 - Maximum Non-Repetitive Surge Current
Maximum Allowable Case
Temperature (°C)
Total Output Current (A)
20 40 60 80 100
160140120
0
120°
(Rect.)
110MT..K Series
+
-
~
150
50
60
70
80
90
100
110
120
130
140
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
123450
110MT..K Series
Per junction
T
J
= 25 °C
T
J
= 150 °C
1000
1
10
100
Maximum Total Power Loss (W)
Total Output Current (A)
25 50 75 100 125
150
0
120°
(Rect.)
110MT..K Series
T
J
= 150 °C
450
0
50
100
150
200
250
300
350
400
Maximum Total Power Loss (W)
Maximum Allowable Ambient
Temperature (°C)
25 50 75 100
150125
0
450
0
50
100
150
200
250
300
350
400
R
thSA
= 0.05 K/W - ΔR
0.12 K/W
0.2 K/W
0.3 K/W
0.4 K/W
0.5 K/W
0.7 K/W
1.0 K/W
1.5 K/W
Peak Half Sine Wave
Forward Current (A)
Number of Equal Amplitude Half
Cycle Current Pulses (N)
10 1001
900
200
300
400
500
600
700
800
110MT..K Series
At any rated load condition and with
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
Peak Half Sine Wave
Forward Current (A)
Pulse Train Duration (s)
0.1
1
0.01
1000
200
400
600
700
800
900
300
500
110MT..K Series
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
versus pulse train duration.
Maximum non-repetitive surge current
VS-90-110MT.KPbF Series
www.vishay.com
Vishay Semiconductors
Revision: 17-Aug-17
5
Document Number: 94352
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Thermal Impedance Z
thJC
Characteristic
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95004
0.01
0.1
1
10
0.001 0.01 0.1 1
Square Wave Pulse Duration (s)
Z
thJC
- Transient Thermal
Impedance (°C/W)
10
90MT..K Series
110MT..K Series
Per junction
Steady state value
R
thJC
= 1.26 K/W
R
thJC
= 1.07 K/W
(DC operation)
Device code
2
1
3
2 - Current rating code: 9 = 90 A (average)
3 - Three phase diodes bridge
1 - Vishay Semiconductors product
4
- Essential part number
5 - Voltage code x 10 = V
RRM
(see Voltage Ratings table)
6 - PbF = Lead (Pb)-free
6
4
11 = 110 A (average)
PbFK160MT011VS-
5
A
B
C
D
E
F
+
-
~
Document Number: 95004 For technical questions, contact: indmodules@vishay.com
www.vishay.com
Revision: 27-Aug-07 1
MTK (with and without optional barrier)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches)
P1-P3P4-P6P7-P8

VS-112MT80KPBF

Mfr. #:
Buy VS-112MT80KPBF
Manufacturer:
Vishay Semiconductors
Description:
Bridge Rectifiers 800 Volt 110 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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