2004 Jan 13 10
Philips Semiconductors Product specification
LIN transceiver TJA1020
I
IL
LOW-level input current V
TXD
=0V −50+5µA
I
OL
LOW-level output current
(local wake-up request)
standby mode;
V
NWAKE
=0V;
V
LIN
=V
BAT
;
V
TXD
= 0.4 V
1.5 3 − mA
Pin NSLP
V
IH
HIGH-level input voltage 2 − 7V
V
IL
LOW-level input voltage −0.3 − +0.8 V
V
hys
NSLP hysteresis voltage 0.03 − 0.5 V
R
NSLP
NSLP pull-down resistor V
NSLP
= 5 V 125 350 800 kΩ
I
IL
LOW-level input current V
NSLP
=0V −50+5µA
Pin RXD (open-drain)
I
OL
LOW-level output current normal slope mode;
V
LIN
=0V; V
RXD
= 0.4 V
1.3 3.5 − mA
I
LH
HIGH-level leakage
current
normal slope mode;
V
LIN
=V
BAT
; V
RXD
=5V
−50+5µA
Pin NWAKE
V
IH
HIGH-level input voltage V
BAT
− 1 − V
BAT
+ 0.3 V
V
IL
LOW-level input voltage −0.3 − V
BAT
− 3.3 V
I
IL
NWAKE pull-up current V
NWAKE
=0V −30 −10 −3 µA
I
LH
HIGH-level leakage
current
V
NWAKE
=27V;
V
BAT
=27V
−50+5µA
Pin INH
R
sw(INH)
switch-on resistance
between pins BAT and
INH
standby; low slope or
normal slope mode;
I
INH
= −15 mA;
V
BAT
=12V
− 30 50 Ω
I
LH
HIGH-level leakage
current
sleep mode;
V
INH
= 27 V; V
BAT
=27V
−50+5µA
Pin LIN
V
o(reces)
LIN recessive output
voltage
V
TXD
=5V; I
LIN
= 0 mA 0.9V
BAT
− V
BAT
V
V
o(dom)
LIN dominant output
voltage
V
TXD
=0V; V
BAT
= 7.3 V −−1.2 V
V
TXD
=0V; V
BAT
= 7.3;
R
L
=1kΩ
0.6 −− V
V
TXD
=0V; V
BAT
=18V −−2.0 V
V
TXD
=0V;V
BAT
=18V;
R
L
=1kΩ
0.8 −− V
I
LH
HIGH-level leakage
current
V
LIN
=V
BAT
−10+1µA
I
IL
LIN pull-up current sleep mode; V
LIN
=0V;
V
NSLP
=0V
−2 −5 −10 µA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
