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DN3535N8-G

P1-P3P4-P5
Supertex inc.
Supertex inc.
www.supertex.com
DN3535
Doc.# DSFP-DN3535
A062713
Features
► High input impedance
► Low input capacitance
► Fast switching speeds
► Low on-resistance
► Free from secondary breakdown
► Low input and output leakage
Applications
► Normally-on switches
► Solid state relays
► Converters
► Linear ampliers
► Constant current sources
► Power supply circuits
► Telecom
General Description
This low threshold depletion-mode (normally-on) transistor
utilizes an advanced vertical DMOS structure and Supertex’s
well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefcient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BV
DSX
Drain-to-gate voltage BV
DGX
Gate-to-source voltage ±20V
Operating and storage
temperature
-55
O
C to +150
O
C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
N-Channel Depletion-Mode
Vertical DMOS FETs
Pin Configuration
GATE
SOURCE
DRAIN
DRAIN
DN5SW
W = Code for week sealed
= “Green” Packaging
Product Marking
TO-243AA (SOT-89)
TO-243AA (SOT-89)
Package may or may not include the following marks: Si or
Ordering Information
Part Number Package Option Packing
DN3535N8-G
TO-243AA (SOT-89)
2000/Reel
Product Summary
BV
DSX
/BV
DGX
R
DS(ON)
(max)
I
DSS
(min)
350V 10Ω 200mA
Package θ
ja
TO-243AA (SOT-89)
133
O
C/W
‡
Typical Thermal Resistance
Notes:
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
2
DN3535
Supertex inc.
www.supertex.com
Doc.# DSFP-DN3535
A062713
90%
10%
90%
90%
10%
10%
Pulse
Generator
VDD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
r
INPUT
INPUT
OUTPUT
0V
VDD
R
GEN
0V
-10V
t
f
Electrical Characteristics (T
A
= 25
O
C unless otherwise specified)
Sym Parameter Min Typ Max Units Conditions
BV
DSS
Drain-to-source breakdown voltage 350 - - V V
GS
= -5.0V, I
D
= 1.0µA
V
GS(OFF)
Gate-to-source off voltage -1.5 - -3.5 V V
DS
= 15V, I
D
= 10µA
ΔV
GS(OFF)
Change in V
GS(OFF)
with temperature - - -4.5 mV/
O
C V
DS
= 15V, I
D
= 10µA
I
GSS
Gate body leakage current - - 100 nA V
GS
= ±20V, V
DS
= 0V
I
D(OFF)
Drain-to-source leakage current
- - 1.0 µA V
DS
= Max rating, V
GS
= -5.0V
- - 1.0 mA
V
DS
= 0.8 Max Rating,
V
GS
= -5.0V, T
A
= 125
O
C
I
DSS
Saturated drain-to-source current 200 - - mA V
GS
= 0V, V
DS
= 15V
R
DS(ON)
Static drain-to-source on-state
resistance
- - 10 Ω V
GS
= 0V, I
D
= 150mA
ΔR
DS(ON)
Change in R
DS(ON)
with temperature - - 1.1 %/
O
C V
GS
= 0V, I
D
= 150mA
G
FS
Forward transconductance 200 - - mmho V
DS
= 10V, I
D
= 100mA
C
ISS
Input capacitance - - 360
pF
V
GS
= -5.0V, V
DS
= 25V,
f = 1.0MHz
C
OSS
Common source output capacitance - - 40
C
RSS
Reverse transfer capacitance - - 10
t
d(ON)
Turn-on delay time - - 15
ns
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25Ω,
V
GS
= 0V to -10V
t
r
Rise time - - 20
t
d(OFF)
Turn-off delay time - - 20
t
f
Fall time - - 30
V
SD
Diode forward voltage drop - - 1.8 V V
GS
= -5.0V, I
SD
= 150mA
t
rr
Reverse recovery time - 800 - ns V
GS
= -5.0V, I
SD
= 150mA
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Thermal Characteristics
Package
I
D
(continuous)
†
I
D
(pulsed)
Power Dissipation
@T
A
= 25
O
C
I
DR
†
I
DRM
TO-243AA 230mA 500mA 1.6W
‡
230mA 500mA
Notes:
† I
D
(continuous) is limited by max rated T
j
.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Switching Waveforms and Test Circuit
3
DN3535
Supertex inc.
www.supertex.com
Doc.# DSFP-DN3535
A062713
Typical Performance Curves
0 50 100 150 200 250 300 350
1.0
0.8
0.6
0.4
0.2
0
V
GS
= +2.0V
-0.5V
-0.8V
-1.0V
-1.5V
-2V
0V
0 2 4 6 8 10
1.0
0.8
0.6
0.4
0.2
0
V
GS
= +2V
0V
-0.5V
-0.8V
-1V
-1.5V
-2V
0.0 0.2 0.4 0.6 0.8
1.0
0.8
0.6
0.4
0.2
0
T
A
= -55
O
C
V
DS
= 10V
I
D
(amperes)
V
DS
(volts)
Output Characteristics
Saturation Characteristics
G
FS
(siemens)
Transconductance vs. Drain Current
Power Dissipation vs. Ambient Temperature
P
D
(watts)
T
A
(
O
C)
Maximum Rated Safe Operating Area
V
DS
(volts)
Thermal Response Characteristics
Thermal Resistance (normalized)
t
P
(seconds)
0 25 50 75 100 125 150
2.0
1.5
1.0
0.5
0
1 10 100 1000
10
1.0
0.1
0.01
0.001
TO-243AA (DC)
TO-243AA (pulsed)
0.001 0.01 0.1 1.0 10
TO-243AA
P
D
= 1.6W
T
C
= 25
O
C
TO-243AA
T
A
= 25
O
C
I
D
(amperes)
V
DS
(volts)
I
D
(amperes)
I
D
(amperes)
T
A
= 25
O
C
T
A
= 125
O
C
1.0
0.8
0.6
0.4
0.2
0
P1-P3P4-P5

DN3535N8-G

Mfr. #:
Buy DN3535N8-G
Manufacturer:
Microchip Technology
Description:
MOSFET 350V 10Ohm
Lifecycle:
New from this manufacturer.
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