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BC858CLT1

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 15
Publication Order Number:
BC856ALT1/D
1
BC856ALT1G Series
General Purpose
Transistors
PNP Silicon
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector-Emitter Voltage
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
V
CEO
−65
−45
−30
V
Collector-Base Voltage
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
V
CBO
−80
−50
−30
V
Emitter−Base Voltage V
EBO
−5.0 V
Collector Current − Continuous I
C
−100 mAdc
Collector Current − Peak I
C
−200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
SOT−23 (TO−236)
CASE 318
STYLE 6
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
MARKING DIAGRAM
xx M G
G
xx = Device Code
xx = (Refer to page 6)
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
www.onsemi.com
BC856ALT1G Series
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage BC856, SBC856 Series
(I
C
= −10 mA) BC857, SBC857 Series
BC858, NSBVC858 BC859 Series
V
(BR)CEO
−65
−45
−30
−
−
−
−
−
−
V
Collector−Emitter Breakdown Voltage BC856 S, SBC856eries
(I
C
= −10 mA, V
EB
= 0) BC857A, SBC857A, BC857B, SBC857B Only
BC858, NSVB858, BC859 Series
V
(BR)CES
−80
−50
−30
−
−
−
−
−
−
V
Collector−Base Breakdown Voltage BC856, SBC856 Series
(I
C
= −10 mA) BC857, SBC857 Series
BC858, NSVBC858, BC859 Series
V
(BR)CBO
−80
−50
−30
−
−
−
−
−
−
V
Emitter−Base Breakdown Voltage BC856, SBC856 Series
(I
E
= −1.0 mA) BC857, SBC857 Series
BC858, NSVBC858, BC859 Series
V
(BR)EBO
−5.0
−5.0
−5.0
−
−
−
−
−
−
V
Collector Cutoff Current (V
CB
= −30 V)
Collector Cutoff Current (V
CB
= −30 V, T
A
= 150°C)
I
CBO
−
−
−
−
−15
−4.0
nA
mA
ON CHARACTERISTICS
DC Current Gain BC856A, SBC856A, BC857A, SBC857A, BC858A
(I
C
= −10 mA, V
CE
= −5.0 V) BC856B, SBC856B, BC857B, SBC857B,
BC858B, NSVBC858B
BC857C, SBC857C BC858C
(I
C
= −2.0 mA, V
CE
= −5.0 V) BC856A, SBC856A, BC857A,
SBC857A, BC858A
BC856B, SBC856B, BC857B, SBC857B, BC858B,
NSVBC858B, BC859B
BC857C, SBC857C, BC858C, BC859C
h
FE
−
−
−
125
220
420
90
150
270
180
290
520
−
−
−
250
475
800
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
V
CE(sat)
−
−
−
−
−0.3
−0.65
V
Base−Emitter Saturation Voltage
(I
C
= −10 mA, I
B
= −0.5 mA)
(I
C
= −100 mA, I
B
= −5.0 mA)
V
BE(sat)
−
−
−0.7
−0.9
−
−
V
Base−Emitter On Voltage
(I
C
= −2.0 mA, V
CE
= −5.0 V)
(I
C
= −10 mA, V
CE
= −5.0 V)
V
BE(on)
−0.6
−
−
−
−0.75
−0.82
V
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −5.0 Vdc, f = 100 MHz)
f
T
100 − − MHz
Output Capacitance
(V
CB
= −10 V, f = 1.0 MHz)
C
ob
− − 4.5 pF
Noise Figure
(I
C
= −0.2 mA, V
CE
= −5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series
BC859 Series
NF
−
−
−
−
10
4.0
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BC856ALT1G Series
www.onsemi.com
3
BC857/BC858/BC859/SBC857/NSVBC858
Figure 1. Normalized DC Current Gain
I
C
, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
I
C
, COLLECTOR CURRENT (mAdc)
-0.2
0.2
Figure 3. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
I
C
, COLLECTOR CURRENT (mA)
-0.6
-0.7
-0.8
-0.9
-1.0
-0.5
0
-0.2
-0.4
-0.1
-0.3
1.6
1.2
2.0
2.8
2.4
-1.2
-1.6
-2.0
-0.02 -1.0
-10
0
-20
-0.1
-0.4
-0.8
h
FE
, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
VB
, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.7
0.5
0.3
-0.2
-10 -100
-1.0
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -10 V
V
CE
= -10 V
T
A
= 25°C
-55°C to +125°C
I
C
= -100 mA
I
C
= -20 mA
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1
-0.2 -0.5
-1.0
-2.0 -5.0
-10
-20 -50
-100
I
C
= -200 mAI
C
= -50 mAI
C
=
-10 mA
Figure 5. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current−Gain − Bandwidth Product
I
C
, COLLECTOR CURRENT (mAdc)
-0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
-0.5
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
T
A
= 25°C
C
ob
C
ib
-0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40
150
-1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50
V
CE
= -10 V
T
A
= 25°C
T
A
= 25°C
1.0
P1-P3P4-P6P7-P7

BC858CLT1

Mfr. #:
Buy BC858CLT1
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 30V PNP
Lifecycle:
New from this manufacturer.
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