IRF8734TRPBF Datasheet IRF8734TRPBF, IRF8734PBF | P7-P9

IRF8734PbF

www.irf.com 7

Fig 16a. Gate Charge Test Circuit

Fig 16b. Gate Charge Waveform

Vds

Vgs

Vgs(th)

Qgs1

Qgs2QgdQgodr

VCC

DUT

20K

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple ≤ 5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

=10V

Driver Gate Drive

D.U.T. I

Waveform

D.U.T. V

Waveform

Inductor Curent

D =

P. W .

Period

*** V

= 5V for Logic Level Devices

***







• dv/dt controlled by R

• Driver same type as D.U.T.

• I

controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T



* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

Fig 17. Diode Reverse Recovery Test Circuit for HEXFET

Power MOSFETs

IRF8734PbF

8 www.irf.com

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

SO-8 Package Outline(Mosfet & Fetky)

Dimensions are shown in milimeters (inches)

SO-8 Part Marking Information

IRF8734PbF

www.irf.com 9

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))

P1-P3 P4-P6 P7-P9 P10-P10

IRF8734TRPBF

Mfr. #:

Buy IRF8734TRPBF

Manufacturer:

Infineon / IR

Description:

MOSFET MOSFT 30V 21A 3.5mOhm 20nC Qg

Lifecycle:

New from this manufacturer.

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IRF8734TRPBF

IRF8734TRPBF

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