©2002 Fairchild Semiconductor Corporation Rev. B1, July 2002
2N5308
TO-92
Absolute Maximum Ratings *
T
A
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
V
CBO
Collector-Base Voltage 40 V
V
EBO
Emitter-Base Voltage 12 V
I
C
Collector Current - Continuous 1.2 A
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ +150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
V
(BR)CEO
Collector-Emitter Breakdown Voltage * I
C
= 10mA, I
B
= 0 40 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 0.1µA, I
E
= 0 40 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 0.1µA, I
C
= 0 12 V
I
CBO
Collector Cutoff Current V
CB
= 40V, I
E
= 0
V
CB
= 40V, I
E
= 0, T
a
= 100°C
0.1
20
µA
µA
I
EBO
Emitter Cutoff Current V
EB
= 12V, I
C
= 0 0.1 µA
On Characteristics *
h
FE
DC Current Gain V
CE
= 5.0V, I
C
= 2.0mA
V
CE
= 5.0V, I
C
= 100mA
7,000
20,000
70,000
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 200mA, I
B
= 0.2mA 1.4 V
V
BE
(sat) Base-Emitter Saturatin Voltage I
C
= 200mA, I
B
= 0.2mA 1.6 V
V
BE
(on) Base-Emitter On Voltage I
C
= 200mA, V
CE
= 5.0V 1.5 V
Small Signal Characteristics
C
cb
Collector-Base Capacitance V
CB
= 10V, f = 1.0MHz 10 pF
h
fe
Small-Signal Current Gain I
C
= 2.0mA, V
CE
= 5.0V,
f = 1.0KHz
I
C
= 2.0mA, V
CE
= 5.0V,
f = 10MHz
7,000
6.0
2N5308
NPN Darlington Transistor
• This device is designed for applications requiring extremely high
current gain at currents to 1.0A.
• Sourced from process 05.
• See MPSA14 for characteristics.
1. Emitter 2. Collector 3. Base
1
