July 2007 Rev 3 1/13
13
STB75NF75L
N-channel 75V - 0.009 - 75A - D
2
PA K
STripFET™ II Power MOSFET
Features
Exceptional dv/dt capability
100% avalanche tested
Low threshold drive
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
Applications
Switching applications
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STB75NF75L 75V <0.011 75A
D²PAK
1
3
Table 1. Device summary
Order code Marking Package Packaging
STB75NF75LT4 B75NF75L D²PAK Tape & reel
www.st.com
Contents STB75NF75L
2/13
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STB75NF75L Electrical ratings
3/13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 75 V
V
GS
Gate-source voltage ± 15 V
I
D
(1)
1. Current limited by package
Drain current (continuous) at T
C
= 25°C 75 A
I
D
Drain current (continuous) at T
C
= 100°C 70 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 300 A
P
TOT
Total dissipation at T
C
= 25°C 300 W
Derating factor 2 W/°C
dv/dt
(3)
3. I
SD
75A, di/dt 500A/µs, V
DD
V
(BR)DSS
, T
j
T
JMAX
Peak diode recovery voltage slope 10 V/ns
E
AS
(4)
4. Starting T
J
= 25
o
C, I
D
= 37.5A, V
DD
= 30V
Single pulse avalanche energy 680 mJ
T
J
T
stg
Operating junction temperature
Storage temperature
-55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case Max 0.5 °C/W
R
thJA
Thermal resistance junction-ambient Max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C

STB75NF75LT4

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 75 Volt 75 Amp
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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