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CAT25256YI-GT3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
© Semiconductor Components Industries, LLC, 2015
June, 2018 − Rev. 11
1 Publication Order Number:
CAT25256/D
CAT25256
EEPROM Serial 256-Kb SPI
Description
The CAT25256 is a EEPROM Serial 256−Kb SPI device internally
organized as 32Kx8 bits. This features a 64−byte page write buffer and
supports the Serial Peripheral Interface (SPI) protocol. The device is
enabled through a Chip Select (CS) input. In addition, the required bus
signals are clock input (SCK), data input (SI) and data output (SO)
lines. The HOLD
input may be used to pause any serial
communication with the CAT25256 device. The device features
software and hardware write protection, including partial as well as
full array protection.
On−Chip ECC (Error Correction Code) makes the device suitable
for high reliability applications.*
Features
• 20 MHz (5 V) SPI Compatible
• 1.8 V to 5.5 V Supply Voltage Range
• SPI Modes (0,0) & (1,1)
• 64−byte Page Write Buffer
• Additional Identification Page with Permanent Write Protection
(New Product)
• Self−timed Write Cycle
• Hardware and Software Protection
• Block Write Protection
− Protect 1/4, 1/2 or Entire EEPROM Array
• Low Power CMOS Technology
• 1,000,000 Program/Erase Cycles
• 100 Year Data Retention
• Industrial and Extended Temperature Range
• 8−lead SOIC, TSSOP and 8−pad UDFN Packages
• This Device is Pb−Free, Halogen Free/BFR Free, and RoHS
Compliant
SI
SO
CAT25256
SCK
V
SS
V
CC
CS
WP
HOLD
Figure 1. Functional Symbol
www.onsemi.com
PIN CONFIGURATIONS
SI
HOLD
V
CC
V
SS
WP
SO
CS
1
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
ORDERING INFORMATION
SOIC−8
V SUFFIX
CASE 751BD
UDFN−8
HU4 SUFFIX
CASE 517AZ
SCK
SOIC (V, X), TSSOP (Y), UDFN (HU4)
TSSOP−8
Y SUFFIX
CASE 948AL
Chip SelectCS
Serial Data OutputSO
Write ProtectWP
GroundV
SS
Serial Data InputSI
Serial ClockSCK
FunctionPin Name
†
PIN FUNCTION
Hold Transmission InputHOLD
Power SupplyV
CC
(Top View)
SOIC−8 WIDE
X SUFFIX
CASE 751BE
†The exposed pad for the UDFN package can be left
floating or connected to Ground.
CAT25256
www.onsemi.com
2
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters Ratings Units
Operating Temperature −45 to +130 °C
Storage Temperature −65 to +150 °C
Voltage on any Pin with Respect to Ground (Note 1) −0.5 to +6.5 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
CC
+ 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than V
CC
+ 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter Min Units
N
END
(Note 3, 4) Endurance 1,000,000 Program / Erase Cycles
T
DR
Data Retention 100 Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, V
CC
= 5 V, 25°C.
4. The new product revision (E) uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when
a single byte has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order
to benefit from the maximum number of write cycles.
Table 3. D.C. OPERATING CHARACTERISTICS − MATURE PRODUCT
(V
CC
= 1.8 V to 5.5 V, T
A
= −40°C to +85°C and V
CC
= 2.5 V to 5.5 V, T
A
= −40°C to +125°C, unless otherwise specified.)
Symbol
Parameter Test Conditions Min Max Units
I
CCR
Supply Current
(Read Mode)
Read, V
CC
= 5.5 V,
SO open
10 MHz / −40°C to 85°C 2 mA
5 MHz / −40°C to 125°C 2 mA
I
CCW
Supply Current
(Write Mode)
Write, V
CC
= 5.5 V,
SO open
10 MHz / −40°C to 85°C 4 mA
5 MHz / −40°C to 125°C 4 mA
I
SB1
Standby Current V
IN
= GND or V
CC
, CS = V
CC
,
WP
= V
CC
, HOLD = V
CC
,
V
CC
= 5.5 V
T
A
= −40°C to +85°C 1
mA
T
A
= −40°C to +125°C 3
mA
I
SB2
Standby Current V
IN
= GND or V
CC
, CS = V
CC
,
WP
= GND, HOLD = GND,
V
CC
= 5.5 V
T
A
= −40°C to +85°C 4
mA
T
A
= −40°C to +125°C 5
mA
I
L
Input Leakage Current V
IN
= GND or V
CC
−2 2
mA
I
LO
Output Leakage
Current
CS = V
CC
,
V
OUT
= GND or V
CC
T
A
= −40°C to +85°C −1 1
mA
T
A
= −40°C to +125°C −1 2
mA
V
IL
Input Low Voltage −0.5 0.3 V
CC
V
V
IH
Input High Voltage 0.7 V
CC
V
CC
+ 0.5 V
V
OL1
Output Low Voltage V
CC
> 2.5 V, I
OL
= 3.0 mA 0.4 V
V
OH1
Output High Voltage V
CC
> 2.5 V, I
OH
= −1.6 mA V
CC
− 0.8 V V
V
OL2
Output Low Voltage
V
CC
> 1.8 V, I
OL
= 150 mA
0.2 V
V
OH2
Output High Voltage
V
CC
> 1.8 V, I
OH
= −100 mA
V
CC
− 0.2 V V
CAT25256
www.onsemi.com
3
Table 4. D.C. OPERATING CHARACTERISTICS − NEW PRODUCT (Rev E)
(V
CC
= 1.8 V to 5.5 V, T
A
= −40°C to +85°C and V
CC
= 2.5 V to 5.5 V, T
A
= −40°C to +125°C, unless otherwise specified.)
Symbol Parameter Test Conditions Min Max Units
I
CCR
Supply Current
(Read Mode)
Read, SO open /
−40°C to +85°C
V
CC
= 1.8 V, f
SCK
= 5 MHz 0.8
mA
V
CC
= 2.5 V, f
SCK
=10 MHz 1.2
V
CC
= 5.5 V, f
SCK
= 20 MHz 3.0
Read, SO open /
−40°C to +125°C
2.5 V< V
CC
< 5.5 V,
f
SCK
= 10 MHz
2.0
I
CCW
Supply Current
(Write Mode)
Write, CS = V
CC
/
−40°C to +85°C
V
CC
= 1.8 V 1.5
mA
V
CC
= 2.5 V 2
V
CC
= 5.5 V 2
Write, CS = V
CC
/
−40°C to +125°C
2.5 V< V
CC
< 5.5 V 2
I
SB1
Standby Current V
IN
= GND or V
CC
,
CS
= V
CC
, WP = V
CC
,
V
CC
= 5.5 V
T
A
= −40°C to +85°C 1 mA
T
A
= −40°C to +125°C 3
I
SB2
Standby Current V
IN
= GND or V
CC
,
CS
= V
CC
, WP = GND,
V
CC
= 5.5 V
T
A
= −40°C to +85°C 3 mA
T
A
= −40°C to +125°C 5
I
L
Input Leakage Current V
IN
= GND or V
CC
−2 2
mA
I
LO
Output Leakage
Current
CS = V
CC
V
OUT
= GND or V
CC
T
A
= −40°C to +85°C −1 1 mA
T
A
= −40°C to +125°C −1 2
V
IL1
Input Low Voltage V
CC
≥ 2.5 V −0.5 0.3 V
CC
V
V
IH1
Input High Voltage V
CC
≥ 2.5 V 0.7 V
CC
V
CC
+ 0.5 V
V
IL2
Input Low Voltage V
CC
< 2.5 V −0.5 0.25 V
CC
V
V
IH2
Input High Voltage V
CC
< 2.5 V 0.75 V
CC
V
CC
+ 0.5 V
V
OL1
Output Low Voltage V
CC
≥ 2.5 V, I
OL
= 3.0 mA 0.4 V
V
OH1
Output High Voltage V
CC
≥ 2.5 V, I
OH
= −1.6 mA V
CC
− 0.8 V V
V
OL2
Output Low Voltage
V
CC
< 2.5 V, I
OL
= 150 mA
0.2 V
V
OH2
Output High Voltage
V
CC
< 2.5 V, I
OH
= −100 mA
V
CC
− 0.2 V V
Table 5. PIN CAPACITANCE (Note 5) (T
A
= 25°C, f = 1.0 MHz, V
CC
= +5.0 V)
Symbol
Test Conditions Min Typ Max Units
C
OUT
Output Capacitance (SO) V
OUT
= 0 V 8 pF
C
IN
Input Capacitance (CS, SCK, SI, WP, HOLD) V
IN
= 0 V 8 pF
5. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
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CAT25256YI-GT3

Mfr. #:
Buy CAT25256YI-GT3
Manufacturer:
ON Semiconductor
Description:
EEPROM 256K SPI Serial CMOS EEPROM
Lifecycle:
New from this manufacturer.
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