2N6028RLRAG Datasheet 2N6028RLRP, 2N6027G, 2N6028G | P1-P3

May, 2006 − Rev.6

1 Publication Order Number:

2N6027/D

2N6027, 2N6028

Preferred Device

Programmable

Unijunction Transistor

Programmable Unijunction

Transistor Triggers

Designed to enable the engineer to “program’’ unijunction

characteristics such as R

BB

, h, I

V

, and I

P

by merely selecting

two resistor values. Application includes thyristor−trigger, oscillator,

pulse and timing circuits. These devices may also be used in special

thyristor applications due to the availability of an anode gate. Supplied

in an inexpensive TO−92 plastic package for high−volume

requirements, this package is readily adaptable for use in automatic

insertion equipment.

Features

• Programmable − R

BB

, h, I

V

and I

P

• Low On−State Voltage − 1.5 V Maximum @ I

F

= 50 mA

• Low Gate to Anode Leakage Current − 10 nA Maximum

• High Peak Output Voltage − 11 V Typical

• Low Offset Voltage − 0.35 V Typical (R

G

= 10 kW)

• Pb−Free Packages are Available*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

PUTs

40 VOLTS, 300 mW

Preferred devices are recommended choices for future use

and best overall value.

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

K

G

A

TO−92 (TO−226AA)

CASE 029

STYLE 16

3

2

1

PIN ASSIGNMENT

1

2

3

Gate

Cathode

Anode

http://onsemi.com

2N602x = Device Code

x = 7 or 8

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

MARKING DIAGRAM

2N

602x

AYWW G

G

(Note: Microdot may be in either location)

2N6027, 2N6028

http://onsemi.com

2

MAXIMUM RATINGS (T

J

= 25°C unless otherwise noted)

Rating

Symbol Value Unit

Power Dissipation*

Derate Above 25°C

P

F

1/q

JA

300

4.0

mW

mW/°C

DC Forward Anode Current*

Derate Above 25°C

I

T

150

2.67

mA

mA/°C

DC Gate Current* I

G

"50 mA

Repetitive Peak Forward Current

100

ms Pulse Width, 1% Duty Cycle

20

ms Pulse Width, 1% Duty Cycle*

I

TRM

1.0

2.0

A

Non−Repetitive Peak Forward Current

10

ms Pulse Width

I

TSM

5.0 A

Gate to Cathode Forward Voltage* V

GKF

40 V

Gate to Cathode Reverse Voltage* V

GKR

*5.0 V

Gate to Anode Reverse Voltage* V

GAR

40 V

Anode to Cathode Voltage* (Note 1) V

AK

±40 V

Capacitive Discharge Energy (Note 2) E 250

mJ

Power Dissipation (Note 3) P

D

300 mW

Operating Temperature T

OPR

−50 to +100 °C

Junction Temperature T

J

−50 to +125 °C

Storage Temperature Range T

stg

−55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

*Indicates JEDEC Registered Data

1. Anode positive, R

GA

= 1000 W

Anode negative, R

GA

= open

2. E = 0.5  CV

2

capacitor discharge energy limiting resistor and repetition.

3. Derate current and power above 25°C.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case

R

q

JC

75 °C/W

Thermal Resistance, Junction−to−Ambient

R

q

JA

200 °C/W

Maximum Lead Temperature for Soldering Purposes

(t1/16″ from case, 10 seconds maximum)

T

L

260 °C

2N6027, 2N6028

http://onsemi.com

3

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Fig. No. Symbol Min Typ Max Unit

Peak Current*

(V

S

= 10 Vdc, R

G

= 1 MW) 2N6027

2N6028

(V

S

= 10 Vdc, R

G

= 10 kW) 2N6027

2N6028

2,9,11 I

P

−

1.25

0.08

4.0

0.70

2.0

0.15

5.0

1.0

mA

Offset Voltage*

(V

S

= 10 Vdc, R

G

= 1 MW) 2N6027

2N6028

(V

S

= 10 Vdc, R

G

= 10 kW) (Both Types)

1 V

T

0.2

0.70

0.50

0.35

1.6

0.6

V

Valley Current*

(V

S

= 10 Vdc, R

G

= 1 MW) 2N6027

2N6028

(V

S

= 10 Vdc, R

G

= 10 k W) 2N6027

2N6028

(V

S

= 10 Vdc, R

G

= 200 W) 2N6027

2N6028

1,4,5 I

V

−

70

25

1.5

1.0

18

150

−

50

25

−

mA

Gate to Anode Leakage Current*

(V

S

= 40 Vdc, T

A

= 25°C, Cathode Open)

(V

S

= 40 Vdc, T

A

= 75°C, Cathode Open)

− I

GAO

−

1.0

3.0

10

−

nAdc

Gate to Cathode Leakage Current

(V

S

= 40 Vdc, Anode to Cathode Shorted)

− I

GKS

− 5.0 50 nAdc

Forward Voltage*

(I

F

= 50 mA Peak) (Note 4)

1,6 V

F

− 0.8 1.5 V

Peak Output Voltage*

(V

G

= 20 Vdc, C

C

= 0.2 mF)

3,7 V

o

6.0 11 − V

Pulse Voltage Rise Time

(V

B

= 20 Vdc, C

C

= 0.2 mF)

3 t

r

− 40 80 ns

*Indicates JEDEC Registered Data

4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.

K

G

A

Programmable Unijunction

with Program" Resistors

R1 and R2

1A −

V

AK

+V

B

I

A

R1

R1 + R2

R1

R2

− V

S

=

V

B

V

AK

I

A

+

V

S

R

G

R

G

=

R1 R2

R1 + R2

Equivalent Test Circuit for

Figure 1A used for electrical

characteristics testing

(also see Figure 2)

1B −

Adjust

for

Turn−on

Threshold

100 k

1.0%

2N5270

V

B

0.01 mF

20

R

G

= R/2

V

S

= V

B/2

(See Figure 1)

+

−

I

P

(SENSE)

100 mV = 1.0 nA

Scope

Put

Under

Test

C

510 k

16 k

27 k

20 W

v

o

+V

B

+V

V

o

6.0 V

0.6 V

t

f

t

IC − Electrical Characteristics

V

A

V

S

V

F

V

−V

P

I

A

I

F

I

V

I

P

V

T

= V

P

− V

S

I

GAO

Figure 1. Electrical Characterization

Figure 2. Peak Current (I

P

) Test Circuit Figure 3. V

o

and t

r

Test Circuit

2N6028RLRAG

2N6028RLRAG

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