STB22NS25Z - STP22NS25Z Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 250 V
V
DGR
Drain-gate voltage (R
GS
= 20 kΩ)250V
V
GS
Gate- source voltage ± 20 V
I
D
Drain current (continuos) at T
C
= 25°C 22 A
I
D
Drain current (continuos) at T
C
= 100°C 13.9 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 88 A
P
TOT
Total dissipation at T
C
= 25°C 135 W
Derating factor 1.07 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 2500 V
dv/dt
(2)
2. I
SD
< 22A, di/dt < 200A/µs, V
DD
= 80% V
(BR)DSS
Peak diode recovery voltage slope 5 V/ns
T
stg
Storage temperature
–55 to 150 °C
T
j
Max. operating junction temperature
Table 2. Thermal data
Rthj-case Thermal resistance junction-case Max 0.93 °C/W
Rthj-amb Thermal resistance junction-ambient Max 62.5 °C/W
T
l
Maximum lead temperature for soldering purpose 300 °C
Table 3. Avalanche Characteristics
Symbol Parameter Max value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
22 A
E
AS
Single pulse avalanche energy
(starting T
j
= 25°C, I
D
= I
AR
, V
DD
= 50V, R
g
= 47Ω)
350 mJ
Obsolete Product(s) - Obsolete Product(s)
