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VS-GT100LA120UX

P1-P3P4-P6P7-P9P10-P10
VS-GT100LA120UX
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-15
1
Document Number: 93099
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
“Low Side Chopper” IGBT SOT-227
(Trench IGBT), 100 A
FEATURES
• Trench IGBT technology
• Very low V
CE(on)
• Square RBSOA
•HEXFRED
®
clamping diode
• 10 μs short circuit capability
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
PRODUCT SUMMARY
V
CES
1200 V
I
C
DC 100 A at 71 °C
V
CE(on)
typical at 100 A, 25 °C 2.36 V
Speed 8 kHz to 30 kHz
Package SOT-227
Circuit Chopper low side switch
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
1200 V
Continuous collector current I
C
T
C
= 25 °C 134
A
T
C
= 80 °C 92
Pulsed collector current I
CM
270
Clamped inductive load current I
LM
270
Diode continuous forward current I
F
T
C
= 25 °C 87
T
C
= 80 °C 59
Gate to emitter voltage V
GE
± 20 V
Power dissipation, IGBT P
D
T
C
= 25 °C 463
W
T
C
= 80 °C 260
Power dissipation, diode P
D
T
C
= 25 °C 338
T
C
= 80 °C 190
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
VS-GT100LA120UX
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-15
2
Document Number: 93099
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown
voltage
V
BR(CES)
V
GE
= 0 V, I
C
= 1 mA 1200 - -
V
Collector to emitter voltage V
CE(on)
V
GE
= 15 V, I
C
= 50 A - 1.79 2.33
V
GE
= 15 V, I
C
= 100 A - 2.36 2.85
V
GE
= 15 V, I
C
= 50 A, T
J
= 125 °C - 2.05 2.62
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C - 2.8 3.42
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 500 μA 5 5.8 7
Temperature coefficient of
threshold voltage
V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C) - -15.6 - mV/°C
Collector to emitter leakage current I
CES
V
GE
= 0 V, V
CE
= 1200 V - 0.5 100 μA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C - 0.052 2 mA
Diode reverse breakdown voltage V
BR
I
R
= 1 mA 1200 - - V
Diode forward voltage drop V
FM
I
C
= 50 A, V
GE
= 0 V - 2.53 3.55
V
I
C
= 100 A, V
GE
= 0 V - 3.32 4.35
I
C
= 50 A, V
GE
= 0 V, T
J
= 125 °C - 2.66 3.70
I
C
= 100 A, V
GE
= 0 V, T
J
= 125 °C - 3.70 4.50
Diode reverse leakage current I
RM
V
R
= V
R
rated - 4 50 μA
T
J
= 125 °C, V
R
= V
R
rated - 0.6 3 mA
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 200 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 100 A, V
CC
= 600 V, V
GE
= 15 V
- 400 -
nCGate to emitter charge (turn-on) Q
ge
- 120 -
Gate to collector charge (turn-on) Q
gc
- 170 -
Turn-on switching loss E
on
I
C
= 100 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 5 
L = 500 μH, T
J
= 25 °C
Energy losses
include tail and
diode recovery
(see fig. 18)
- 21.9 -
mJ
Turn-off switching loss E
off
-5.48-
Total switching loss E
tot
- 27.38 -
Turn-on switching loss E
on
I
C
= 100 A, V
CC
= 600 V,
V
GE
= 15 V, R
g
= 5 
L = 500 μH, T
J
= 125 °C
- 23.6 -
Turn-off switching loss E
off
-7.65-
Total switching loss E
tot
- 31.25 -
Turn-on delay time t
d(on)
- 195 -
ns
Rise time t
r
- 259 -
Turn-off delay time t
d(off)
- 188 -
Fall time t
f
- 212 -
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 270 A, R
g
= 22 
V
GE
= 15 V to 0 V, V
CC
= 900 V,
V
P
= 1200 V
Fullsquare
Short circuit safe operating area SCSOA
T
J
= 150 °C, R
g
= 22 
V
GE
= 15 V to 0 V, V
CC
= 900 V,
V
P
= 1200 V
10 μs
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
- 129 161 ns
Diode peak reverse current I
rr
-1114A
Diode recovery charge Q
rr
- 700 1046 nC
Diode reverse recovery time t
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
R
= 200 V, T
J
= 125 °C
- 208 257 ns
Diode peak reverse current I
rr
-1721A
Diode recovery charge Q
rr
- 1768 2698 nC
VS-GT100LA120UX
www.vishay.com
Vishay Semiconductors
Revision: 11-Jun-15
3
Document Number: 93099
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse Bias SOA
T
J
= 150 °C, V
GE
= 15 V
Fig. 3 - Typical IGBT Collector Current Characteristics
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Junction and storage temperature range T
J
, T
Stg
-40 - 150 °C
Junction to case
IGBT
R
thJC
- - 0.27
°C/WDiode - - 0.37
Case to heatsink R
thCS
Flat, greased surface - 0.05 -
Weight -30-g
Mounting torque --1.3Nm
Case style SOT-227
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
0 20 40 60 80 100 120 140 160
0
160
100
120
140
20
40
60
80
I
C
(A)
V
CE
(V)
1 10 100 1000 10 000
0.01
0.1
1
1000
10
100
I
C
(A)
V
CE
(V)
0246135
0
300
50
100
200
150
250
T
J
= 125 °C
T
J
= 25 °C
I
CES
(mA)
V
CES
(V)
100 300 500 700 900 1100
0.0001
0.1
0.01
0.001
T
J
= 125 °C
T
J
= 25 °C
P1-P3P4-P6P7-P9P10-P10

VS-GT100LA120UX

Mfr. #:
Buy VS-GT100LA120UX
Manufacturer:
Vishay
Description:
IGBT 1200V 134A 463W SOT-227
Lifecycle:
New from this manufacturer.
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