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IXDN509SIA

P1-P3P4-P6P7-P9P10-P12
First Release
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOS
TM
processes
• Latch-Up protected up to 9 Amps
• High 9A peak output current
• Wide operating range: 4.5V to 30V
• -55°C to +125°C extended operating
temperature
• High capacitive load drive
capability: 1800pF in <15ns
• Matched rise and fall times
• Low propagation delay time
• Low output impedance
• Low supply current
Applications
• Driving MOSFETs and IGBTs
• Motor controls
• Line drivers
• Pulse generators
• Local power ON/OFF switch
• Switch Mode Power Supplies (SMPS)
• DC to DC converters
• Pulse transformer driver
• Class D switching amplifiers
• Power charge pumps
General Description
The IXDI509 and IXDN509 are high speed high current gate
drivers specifically designed to drive the largest IXYS
MOSFETs & IGBTs to their minimum switching time and
maximum practical frequency limits. The IXDI509 and
IXDN509 can source and sink 9 Amps of peak current while
producing voltage rise and fall times of less than 30ns. The
inputs of the drivers are compatible with TTL or CMOS and
are virtually immune to latch up over the entire operating
range. Patented* design innovations eliminate cross
conduction and current "shoot-through". Improved speed
and drive capabilities are further enhanced by matched rise
and fall times.
The IXDI509 is configured as a Inverting Gate Driver, and the
IXDN509 is configured as a Non-Inverting Gate Driver.
The IXDI509 and IXDN509 are each available in the 8-Pin P-
DIP (PI) package, the 8-Pin SOIC (SIA) package, and the
6-Lead DFN (D1) package, (which occupies less than 65%
of the board area of the 8-Pin SOIC).
*United States Patent 6,917,227
Ordering Information
Part Number Description
Package
Type
Packing Style
Pack
Qty
Configuration
IXDI509PI 9A Low Side Gate Driver I.C. 8-Pin PDIP Tube 50
IXDI509SIA 9A Low Side Gate Driver I.C. 8-Pin SOIC Tube 94
IXDI509SIAT/R 9A Low Side Gate Driver I.C. 8-Pin SOIC 13” Tape and Reel 2500
IXDI509D1 9A Low Side Gate Driver I.C. 6-Lead DFN 2” x 2” Waffle Pack 56
IXDI509D1T/R 9A Low Side Gate Driver I.C. 6-Lead DFN 13” Tape and Reel 2500
Inverting
IXDN509PI 9A Low Side Gate Driver I.C. 8-Pin PDIP Tube 50
IXDN509SIA 9A Low Side Gate Driver I.C. 8-Pin SOIC Tube 94
IXDN509SIAT/R 9A Low Side Gate Driver I.C. 8-Pin SOIC 13” Tape and Reel 2500
IXDN509D1 9A Low Side Gate Driver I.C. 6-Lead DFN 2” x 2” Waffle Pack 56
IXDN509D1T/R 9A Low Side Gate Driver I.C. 6-Lead DFN 13” Tape and Reel 2500
Non-Inverting
DS99670A(10/07)
NOTE: All parts are lead-free and RoHS Compliant
Copyright © 2007 IXYS CORPORATION All rights reserved
IXDI509 / IXDN509
9 Ampere Low-Side Ultrafast MOSFET Drivers
2
Copyright © 2007 IXYS CORPORATION All rights reserved
IXDI509 / IXDN509
Figure 2 - IXDN509 Non-Inverting 9A Gate Driver Functional Block Diagram
Figure 1 - IXDI509 Inverting 9A Gate Driver Functional Block Diagram
* United States Patent 6,917,227
N
P
OUT
Vcc
IN
ANTI-CROSS
CONDUCTION
CIRCUIT *
GND
GND
Vcc
N
P
OUT
Vcc
IN
ANTI-CROSS
CONDUCTION
CIRCUIT *
GND
GND
Vcc
3
IXDI509 / IXDN509
Absolute Maximum Ratings
(1)
Operating Ratings
(2)
Parameter Value
Supply Voltage 35 V
All Other Pins -0.3 V to V
CC
+ 0.3V
Junction Temperature 150 °C
Storage Temperature -65 °C to 150 °C
Lead Temperature (10 Sec) 300 °C
Parameter Value
Operating Supply Voltage 4.5V to 30V
Operating Temperature Range -55 °C to 125 °C
IXYS reserves the right to change limits, test conditions, and dimensions.
Package Thermal Resistance *
8-Pin PDIP (PI)
θ
J-A
(typ) 125 °C/W
8-Pin SOIC (SIA)
θ
J-A
(typ) 200 °C/W
6-Lead DFN (D1)
θ
J-A
(typ) 125-200 °C/W
6-Lead DFN (D1)
θ
J-C
(max) 2.0 °C/W
6-Lead DFN (D1)
θ
J-S
(typ) 6.3 °C/W
Unless otherwise noted, 4.5V ≤ V
CC
≤ 30V .
All voltage measurements with respect to GND. IXD_509 configured as described in Test Conditions.
Electrical Characteristics @ T
A
= 25
o
C
(3)
Symbol Parameter Test Conditions Min Typ Max Units
V
IH
High input voltage
4.5V ≤ V
CC
≤ 18V
2.4 V
V
IL
Low input voltage
4.5V ≤ V
CC
≤ 18V
0.8 V
V
IN
Input voltage range
-5 V
CC
+ 0.3 V
I
IN
Input current
0V ≤ V
IN
≤ V
CC
-10 10
µA
V
OH
High output voltage
V
CC
- 0.025 V
V
OL
Low output voltage
0.025 V
R
OH
High state output resistance
V
CC
= 18V 0.6 1
Ω
R
OL
Low state output resistance
V
CC
= 18V 0.4
0.8
Ω
I
PEAK
Peak output current
V
CC
= 15V
9
A
I
DC
Continuous output current
Limited by package power
dissipation
2 A
t
R
Rise time
C
LOAD
=10,000pF V
CC
=18V
25
45 ns
t
F
Fall time
C
LOAD
=10,000pF V
CC
=18V 23 40 ns
t
ONDLY
On-time propagation delay
C
LOAD
=10,000pF V
CC
=18V 18 35 ns
t
OFFDLY
Off-time propagation delay
C
LOAD
=10,000pF V
CC
=18V 19 30 ns
V
CC
Power supply voltage
4.5 18 30 V
I
CC
Power supply current V
CC
= 18V, V
IN
=0V
V
IN
= 3.5V
V
IN
= V
CC
1
75
3
75
µA
mA
mA
(4)
P1-P3P4-P6P7-P9P10-P12

IXDN509SIA

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Description:
IC GATE DRIVER SGL 9A 8-SOIC
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