NUP5120X6T2G

© Semiconductor Components Industries, LLC, 2006
November, 2017 Rev. 5
1 Publication Order Number:
NUP5120/D
NUP5120X6
ESD Protection Diode Array,
5-Line
This 5line surge protection array is designed for application
requiring surge protection capability. It is intended for use in
overtransient voltage and ESD sensitive equipment such as cell
phones, portables, computers, printers and other applications. This
device features a monolithic common anode design which protects
five independent lines in a single SOT563 package.
Features
Protects up to 5 Lines in a Single SOT563 Package
ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model
and Class C (Exceeding 400 V) per Machine Model.
Compliance with IEC 6100042 (ESD) 15 kV (Air), 8 kV (Contact)
This is a PbFree Device
Applications
Hand Held Portable Applications
Serial and Parallel Ports
Notebooks, Desktops, Servers
MAXIMUM RATINGS (T
J
= 25°C, unless otherwise specified)
Symbol Rating Value Unit
P
PK
1 Peak Power Dissipation
8x20 msec double exponential waveform,
(Note 1)
90 W
T
J
Operating Junction Temperature Range 40 to 125 °C
T
STG
Storage Temperature Range 55 to 150 °C
T
L
Lead Solder Temperature – Maximum
(10 seconds)
260 °C
ESD Human Body Model (HBM)
Machine Model (MM)
IEC 6100042 Air (ESD)
IEC 6100042 Contact (ESD)
16000
400
15000
8000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 1.
SOT563
CASE 463A
STYLE 6
1
2
3
6
5
4
RN = Specific Device Code
M = Month Code
G = PbFree Package
(Note: Microdot may be in either location)
MARKING
DIAGRAM
RN MG
G
www.onsemi.com
Device Package Shipping
ORDERING INFORMATION
1
2
3
6
5
4
PIN ASSIGNMENT
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
SOT563 5LINE SURGE
PROTECTION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
www.onsemi.com
NUP5120X6T1G SOT563
(PbFree)
4000/Tape & Reel
NUP5120X6T2G SOT563
(PbFree)
4000/Tape & Reel
SCALE 4:1
NUP5120X6
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C, unless otherwise specified)
Parameter
Conditions Symbol Min Typ Max Unit
Reverse Working Voltage (Note 2) V
RWM
5.0 V
Breakdown Voltage I
T
= 1 mA, (Note 3) V
BR
6.2 6.8 7.2 V
Reverse Leakage Current V
RWM
= 3 V I
R
0.01 0.5
mA
Capacitance V
R
= 0 V, f = 1 MHz (Line to GND)
V
R
= 2.5 V, f = 1 MHz (Line to GND)
C
J
54 70 pF
2. Surge protection devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater
than the DC or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
NUP5120X6
www.onsemi.com
3
Figure 1. Power Derating vs. Ambient
Temperature
PULSE DURATION (μS)
100101
100
10
1000
PEAK POWER (W)
Figure 2. Peak Power vs. Pulse Duration
Figure 3. Peak Current vs. Clamp Voltage
V
CL
, CLAMP VOLTAGE (V)
161086
I
PP
, PEAK CURRENT (A)
1412
1
0.1
10
100
V
R
, REVERSE VOLTAGE (V)
6543210
60
50
40
30
20
10
0
C
T
, TYPICAL CAPACITANCE (pF)
Figure 4. Typical Capacitance vs. Reverse
Voltage
Figure 5. Reverse Current vs. Reverse Voltage
REVERSE VOLTAGE (V)
4321
REVERSE CURRENT (nA)
65
0.1
10
0.01
100
1000
T
J
= 25 °C
FORWARD VOLTAGE (V)
1.21.11.00.90.80.70.6
0.1
0.01
0.001
1
FORWARD CURRENT (A)
Figure 6. Typical Forward Current vs. Forward
Voltage
T
A
, AMBIENT TEMPERATURE (°C)
1501251007550250
80
60
40
20
0
100
120
% OF RATED POWER OR I
PP
1
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
A
= 25 °C
T
A
= 25 °C
T
A
= 25 °C
T
A
= 25 °C
T
A
= 25 °C

NUP5120X6T2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors 5 Line Suppressor Array
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet