OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

V10P12HM3_A/H

P1-P3P4-P5
V10P12
www.vishay.com
Vishay General Semiconductor
Revision: 16-Dec-14
1
Document Number: 89171
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.51 V at I
F
= 5 A
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters and polarity protection
applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
RRM
120 V
I
FSM
160 A
E
AS
100 mJ
V
F
at I
F
= 10 A 0.62 V
T
J
max. 150 °C
Package TO-277A (SMPC)
Diode variations Single
K
2
1
TO-277A (SMPC)
TMBS
®
eSMP
®
Series
Anode 1
Anode 2Cathode
K
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10P12 UNIT
Device marking code V1012
Maximum repetitive peak reverse voltage V
RRM
120 V
Maximum average forward rectified current (fig. 1) I
F(AV)
10 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
160 A
Non-repetitive avalanche energy at I
AS
= 2.0 A, T
J
= 25 °C E
AS
100 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C I
RRM
0.5 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V10P12
www.vishay.com
Vishay General Semiconductor
Revision: 16-Dec-14
2
Document Number: 89171
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
Units mounted on recommended PCB 1 oz. pad layout
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I
R
= 1.0 mA T
A
= 25 °C V
BR
120 (minimum) - V
Instantaneous forward voltage
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.57 -
V
I
F
= 10 A 0.74 0.82
I
F
= 5 A
T
A
= 125 °C
0.51 -
I
F
= 10 A 0.62 0.70
Reverse current
V
R
= 90 V
T
A
= 25 °C
I
R
(2)
6-μA
T
A
= 125 °C 4.5 - mA
V
R
= 120 V
T
A
= 25 °C 16 400 μA
T
A
= 125 °C 8.5 30 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10P12 UNIT
Typical thermal resistance
R
JA
(1)
60
°C/W
R
JL
4
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V10P12-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
V10P12-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
V10P12HM3/86A
(1)
0.10 86A 1500 7" diameter plastic tape and reel
V10P12HM3/87A
(1)
0.10 87A 6500 13" diameter plastic tape and reel
V10P12HM3_A/H
(1)
0.10 86A 1500 7" diameter plastic tape and reel
V10P12HM3_A/I
(1)
0.10 87A 6500 13" diameter plastic tape and reel
V10P12
www.vishay.com
Vishay General Semiconductor
Revision: 16-Dec-14
3
Document Number: 89171
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
Lead Temperature (°C)
12
4
0
0 75 175
Average Forward Current (A)
25 100 15050 125
8
2
Resistive or Inductive Load
6
T
L
Measured
at the Cathode Band Terminal
10
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
Average Forward Current (A)
9
6
0
0612
Average Power Loss (W)
47510
1
4
D = t
p
/T t
p
T
5
D = 0.8
3
8321
2
8
7
119
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
Instantaneous Forward Voltage (V)
100
0.1
0.1 0.6 1.0
Instantaneous Forward Current (A)
0.2 0.8
1
0.4
T
A
= 100 °C
10
0.5 0.70.3 0.9
Percent of Rated Peak Reverse Voltage (%)
100
0.001
10 40 100
Instantaneous Reverse Current (mA)
50
1
30 60
10
9070
0.1
0.01
80
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
20
10 000
10
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1000
Reverse Voltage (V)
0.1 100110
100
t - Pulse Duration (s)
100
1
0.01 10 100
Transient Thermal Impedance (°C/W)
0.1 1
10
Junction to Ambient
P1-P3P4-P5

V10P12HM3_A/H

Mfr. #:
Buy V10P12HM3_A/H
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 10A, 120V, SMPC, TRENCH SKY RECT.
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet