DPG20C200PN Datasheet DPG20C200PN | P1-P3

DPG20C200PN

Low Loss and Soft Recovery

High Performance Fast Recovery Diode

Common Cathode

HiPerFRED²

1 2

3

Part number

DPG20C200PN

Backside: isolated

FAV

rr

tns35

RRM

10

200

=

V= V

I= A

2x

Features / Advantages: Applications: Package:

● Planar passivated chips

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Very soft recovery behaviour

● Avalanche voltage rated for reliable operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

TO-220FP

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

● Soldering pins for PCB mounting

● Base plate: Plastic overmolded tab

● Reduced weight

● Isolation Voltage: V~

2500

IXYS reserves the right to change limits, conditions and dimensions.

20131126aData according to IEC 60747and per semiconductor unless otherwise specified

DPG20C200PN

n

s

3

A

T

VJ

=°C

reverse recovery time

A

5.5

35

45

n

s

I

RM

max. reverse recovery current

I

F

=A;10

25

T=125°C

VJ

-di

F

=A/µs200/dtt

rr

V

R

=V130

T

VJ

=°C25

T=125°C

VJ

V = V

Symbol Definition

Ratings

typ. max.

I

R

V

I

A

V

F

1.27

R 4.4 K/

W

R

min.

10

V

RSM

V

1T = 25°C

VJ

T = °C

VJ

m

A

0.06V = V

R

T = 25°C

VJ

I = A

F

V

T = °C

C

125

P

tot

35

W

T = 25°C

C

R K/

W

10

200

max. non-repetitive reverse blocking voltage

reverse current, drain current

forward voltage drop

total power dissipation

Conditions

Uni

t

1.45

T = 25°C

VJ

150

V

F0

V

0.74T = °C

VJ

175

r

F

17.7

m

Ω

V

0.98T = °C

VJ

I = A

F

V

10

1.17

I = A

F

20

I = A

F

20

threshold voltage

slope resistance

for power loss calculation only

µ

A

150

V

RRM

V

200

max. repetitive reverse blocking voltage

T = 25°C

VJ

C

J

15

j

unction capacitance

V = V150 T = 25°Cf = 1 MHz

R

VJ

p

F

I

FSM

t = 10 ms; (50 Hz), sine; T = 45°C

VJ

max. forward surge current

V = 0 V

R

T = °C

VJ

175

140

A

200

FAV

d =rectangular 0.5

average forward current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Fast Diode

200

0.50

IXYS reserves the right to change limits, conditions and dimensions.

20131126aData according to IEC 60747and per semiconductor unless otherwise specified

DPG20C200PN

Ratings

Logo

Part Number

DateCode

Assembly Code

Product Marking

Assembly Line

XXXXXX

YYWWZ

abcdef

D

P

G

20

C

200

PN

Part number

Diode

HiPerFRED

extreme fast

Common Cathode

TO-220ABFP (3)

=

Current Rating [A]

Reverse Voltage [V]

=

Package

T

op

°C

M

D

Nm0.6

mounting torque

0.4

T

VJ

°C175

virtual junction temperature

-55

Weight g2

Symbol Definition typ. max.min.Conditions

operation temperature

Unit

F

C

N60

mounting force with clip

20

V V

t = 1 second

V

t = 1 minute

isolation voltage

mm

1.6 1.0

2.5 2.5

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current

35 A

per terminal

150-55

terminal to terminal

TO-220FP

Similar Part Package Voltage class

DPG20C200PB TO-220AB (3) 200

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

DPG20C200PN 503658Tube 50DPG20C200PNStandard

2500

ISOL

T

stg

°C150

storage temperature

-55

2100

threshold voltage

V0.74

mΩ

V

0 max

R

0 max

slope resistance *

14.5

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Fast

Diode

175 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions.

20131126aData according to IEC 60747and per semiconductor unless otherwise specified

DPG20C200PN

DPG20C200PN

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