IRLR3103TRR

P1-P3 P4-P6 P7-P9 P10-P11

IRLR/U3103

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

400

800

1200

1600

2000

2400

2800

3200

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

3

6

9

12

15

0 10203040506070

Q , Total Gate Charge (nC)

G

V , Gate-to-Source Voltage (V)

GS

A

FOR TEST CIRCUIT

SEE FIGURE 13

V = 24V

V = 15V

I = 34A

DS

DS

D

10

100

1000

0.4 0.8 1.2 1.6 2.0 2.4 2.8

T = 25°C

J

V = 0V

GS

V , Source-to-Drain Volta

g

e (V)

I , Reverse Drain Current (A)

SD

SD

A

T = 175°C

J

1

10

100

1000

1 10 100

V , Drain-to-Source Voltage (V)

DS

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

D

DS(on)

10µs

100µs

1ms

10ms

A

T = 25°C

T = 175°C

Single Pulse

C

J

IRLR/U3103

www.irf.com 5

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

5.0V

+

-

V

DD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectan

g

ular Pulse Duration

(

sec

)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

25 50 75 100 125 150 175

0

10

20

30

40

50

60

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

IRLR/U3103

6 www.irf.com

Q

G

Q

GS

Q

GD

V

G

Charge

5.0 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

t

p

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

10V

0

100

200

300

400

500

600

25 50 75 100 125 150 175

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Starting T , Junction Temperature (°C)

V = 15V

I

TOP 14A

24A

BOTTOM 34A

DD

D

P1-P3 P4-P6 P7-P9 P10-P11

IRLR3103TRR

Mfr. #:

Buy IRLR3103TRR

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 30V 55A DPAK

Lifecycle:

New from this manufacturer.

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