NLVVHC1GT125DT1G

© Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 14
1 Publication Order Number:
MC74VHC1GT125/D
MC74VHC1GT125
Noninverting Buffer /
CMOS Logic Level Shifter
with LSTTLCompatible Inputs
The MC74VHC1GT125 is a single gate noninverting buffer
fabricated with silicon gate CMOS technology. It achieves high speed
operation similar to equivalent Bipolar Schottky TTL while
maintaining CMOS low power dissipation.
The MC74VHC1GT125 requires the 3state control input (OE
) to
be set High to place the output into the high impedance state.
The device input is compatible with TTLtype input thresholds and
the output has a full 5 V CMOS level output swing. The input protection
circuitry on this device allows overvoltage tolerance on the input,
allowing the device to be used as a logiclevel translator from 3 V
CMOS logic to 5 V CMOS Logic or from 1.8 V CMOS logic to 3 V
CMOS Logic while operating at the highvoltage power supply.
The MC74VHC1GT125 input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1GT125 to be used to interface 5 V circuits to
3 V circuits. The output structures also provide protection when
V
CC
= 0 V. These input and output structures help prevent device
destruction caused by supply voltage input/output voltage mismatch,
battery backup, hot insertion, etc.
Features
High Speed: t
PD
= 3.5 ns (Typ) at V
CC
= 5 V
Low Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
TTLCompatible Inputs: V
IL
= 0.8 V; V
IH
= 2 V
CMOSCompatible Outputs: V
OH
> 0.8 V
CC
; V
OL
< 0.1 V
CC
@Load
Power Down Protection Provided on Inputs and Outputs
Balanced Propagation Delays
Pin and Function Compatible with Other Standard Logic Families
Chip Complexity: FETs = 62; Equivalent Gates = 16
These Devices are PbFree and are RoHS Compliant
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ100
Qualified and PPAP Capable
Figure 1. Pinout (Top View)
IN A
OUT Y
V
CC
OE
IN A
OUT YGND
OE
Figure 2. Logic Symbol
1
2
3
4
5
PIN ASSIGNMENT
1
2
3 GND
OE
IN A
4
5V
CC
OUT Y
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
FUNCTION TABLE
L
H
X
A Input Y Output
L
H
Z
OE
Input
L
L
H
http://onsemi.com
SC88A / SOT353 / SC70
DF SUFFIX
CASE 419A
TSOP5 / SOT23 / SC59
DT SUFFIX
CASE 483
MARKING
DIAGRAMS
1
5
1
5
1
5
W1 M G
G
W1 = Device Code
M = Date Code*
G = PbFree Package
1
5
W1 M G
G
M
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
MC74VHC1GT125
http://onsemi.com
2
MAXIMUM RATINGS
Symbol Characteristics Value Unit
V
CC
DC Supply Voltage 0.5 to +7.0 V
V
IN
DC Input Voltage 0.5 to +7.0 V
V
OUT
DC Output Voltage V
CC
= 0
High or Low State
0.5 to 7.0
0.5 to V
CC
+ 0.5
V
I
IK
Input Diode Current 20 mA
I
OK
Output Diode Current V
OUT
< GND; V
OUT
> V
CC
+20 mA
I
OUT
DC Output Current, per Pin +25 mA
I
CC
DC Supply Current, V
CC
and GND +50 mA
P
D
Power Dissipation in Still Air SC88A, TSOP5 200 mW
q
JA
Thermal Resistance SC88A, TSOP5 333 °C/W
T
L
Lead Temperature, 1 mm from Case for 10 s 260 °C
T
J
Junction Temperature Under Bias +150 °C
T
stg
Storage Temperature 65 to +150 °C
V
ESD
ESD Withstand Voltage Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
> 2000
> 200
N/A
V
I
Latchup
Latchup Performance Above V
CC
and Below GND at 125°C (Note 4) ±500 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22A114A
2. Tested to EIA/JESD22A115A
3. Tested to JESD22C101A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
DC Supply Voltage 3.0 5.5 V
V
IN
DC Input Voltage 0.0 5.5 V
V
OUT
DC Output Voltage 0.0 V
CC
V
T
A
Operating Temperature Range 55 +125 °C
t
r
, t
f
Input Rise and Fall Time V
CC
= 5.0 V ± 0.5 V 0 20 ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature 5C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
TIME, YEARS
NORMALIZED FAILURE RATE
T
J
= 80
C°
T
J
= 90
C°
T
J
= 100 C°
T
J
= 110 C°
T
J
= 130 C°
T
J
= 120 C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time
Junction Temperature
MC74VHC1GT125
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions
V
CC
(V)
T
A
= 25°C T
A
85°C 55 T
A
125°C
Unit
Min Typ Max Min Max Min Max
V
IH
Minimum HighLevel
Input Voltage
3.0
4.5
5.5
1.4
2.0
2.0
1.4
2.0
2.0
1.4
2.0
2.0
V
V
IL
Maximum LowLevel
Input Voltage
3.0
4.5
5.5
0.53
0.8
0.8
0.53
0.8
0.8
0.53
0.8
0.8
V
V
OH
Minimum HighLevel
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OH
= 50 mA
3.0
4.5
2.9
4.4
3.0
4.5
2.9
4.4
2.9
4.4
V
V
IN
= V
IH
or V
IL
I
OH
= 4 mA
I
OH
= 8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
OL
Maximum LowLevel
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
3.0
4.5
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
I
IN
Maximum Input
Leakage Current
V
IN
= 5.5 V or GND 0 to
5.5
± 0.10 ± 1.0 ± 1.0
mA
I
CC
Maximum Quiescent
Supply Current
V
IN
= V
CC
or GND 5.5 1.0 20 40
mA
I
CCT
Quiescent Supply
Current
Input: V
IN
= 3.4 V
Other Input: V
CC
or
GND
5.5 1.35 1.50 1.65 mA
I
OPD
Output Leakage
Current
V
OUT
= 5.5 V 0.0 0.5 5.0 10
mA
I
OZ
Maximum 3State
Leakage Current
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or GND
5.5 ± 0.25 ± 2.5 ± 2.5
mA
I
OPD
Output Leakage
Current
V
OUT
= 5.5 V 0.0 0.5 5.0 10
mA
AC ELECTRICAL CHARACTERISTICS Input t
r
= t
f
= 3.0 ns
Symbol Parameter Test Conditions
T
A
= 25°C T
A
85°C 55 T
A
125°C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Maximum Propagation
Delay, A to Y
(Figures 3 and 5.)
V
CC
= 3.3 ± 0.3 V C
L
= 15pF
C
L
= 50pF
5.6
8.1
8.0
11.5
1.0
1.0
9.5
13.0
12.0
16.0
ns
V
CC
= 5.0 ± 0.5 V C
L
= 15pF
C
L
= 50pF
3.8
5.3
5.5
7.5
1.0
1.0
6.5
8.5
8.5
10.5
t
PZL
,
t
PZH
Maximum Output
Enable TIme,OE
to Y
(Figures 4 and 5)
V
CC
= 3.3 ± 0.3 V C
L
= 15pF
R
L
= R
I
= 500 W C
L
= 50pF
5.4
7.9
8.0
11.5
1.0
1.0
9.5
13.0
11.5
15.0
ns
V
CC
= 5.0 ± 0.5 V C
L
= 15pF
R
L
= R
I
= 500 W C
L
= 50pF
3.6
5.1
5.1
7.1
1.0
1.0
6.0
8.0
7.5
9.5
t
PLZ
,
t
PHZ
Maximum Output
Disable Time,OE
to Y
(Figures 4 and 5)
V
CC
= 3.3 ± 0.3 V C
L
= 15pF
R
L
= R
I
= 500 W C
L
= 50pF
6.5
8.0
9.7
13.2
1.0
1.0
11.5
15.0
14.5
18.0
ns
V
CC
= 5.0 ± 0.5 V C
L
= 15pF
R
L
= R
I
= 500 W C
L
= 50pF
4.8
7.0
6.8
8.8
1.0
1.0
8.0
10.0
10.0
12.0
C
in
Maximum Input Capacitance 4 10 10 10 pF
C
out
Maximum ThreeState
Output Capacitance
(Output in High Impedance
State)
6 pF
C
PD
Power Dissipation Capacitance (Note 5)
Typical @ 25°C, V
CC
= 5.0 V
pF
14
5. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
/ 4 (per buffer). C
PD
is used to determine the
noload dynamic power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.

NLVVHC1GT125DT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Buffers & Line Drivers LOG CMOS BUFR
Lifecycle:
New from this manufacturer.
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