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BZV49-C11,115

P1-P3P4-P6P7-P9P10-P11
2005 Feb 03 3
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV49 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a ceramic substrate; area = 2.5 cm
2
; thickness = 0.7 mm.
ELECTRICAL CHARACTERISTICS
Total series
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
continuous forward current − 250 mA
I
ZSM
non-repetitive peak reverse current t
p
= 100 μs; square wave;
T
j
= 25 °C prior to surge
see Table
“Per type”
P
tot
total power dissipation T
amb
= 25 °C; note 1 − 1 W
P
ZSM
non-repetitive peak reverse power
dissipation
t
p
= 100 μs; square wave;
T
j
= 25 °C prior to surge; see Fig.2
− 40 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage I
F
= 50 mA; see Fig.3 1 V
2005 Feb 03 4
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV49 series
Per type
T
j
= 25 °C unless otherwise specified.
BZV49-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at
I
Ztest
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
see Figs 4 and 5
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
C
d
(pF)
at f
= 1 MHz;
at V
R
= 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at
t
p
= 100 μs;
T
amb
= 25 °C
I
R
(μA)
V
R
(V)
MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX.
2V4 2.2 2.6 70 100 −3.5 −1.6 0 5 450 50 1.0 6.0
2V7 2.5 2.9 75 100 −3.5 −2.0 0 5 450 20 1.0 6.0
3V0 2.8 3.2 80 95 −3.5 −2.1 0 5 450 10 1.0 6.0
3V3 3.1 3.5 85 95 −3.5 −2.4 0 5 450 5 1.0 6.0
3V6 3.4 3.8 85 90 −3.5 −2.4 0 5 450 5 1.0 6.0
3V9 3.7 4.1 85 90 −3.5 −2.5 0 5 450 3 1.0 6.0
4V3 4.0 4.6 80 90 −3.5 −2.5 0 5 450 3 1.0 6.0
4V7 4.4 5.0 50 80 −3.5 −1.4 +0.2 5 300 3 2.0 6.0
5V1 4.8 5.4 40 60 −2.7 −0.8 +1.2 5 300 2 2.0 6.0
5V6 5.2 6.0 15 40 −2.0 +1.2 +2.5 5 300 1 2.0 6.0
6V2 5.8 6.6 6 10 0.4 2.3 3.7 5 200 3 4.0 6.0
6V8 6.4 7.2 6 15 1.2 3.0 4.5 5 200 2 4.0 6.0
7V5 7.0 7.9 6 15 2.5 4.0 5.3 5 150 1 5.0 4.0
8V2 7.7 8.7 6 15 3.2 4.6 6.2 5 150 0.7 5.0 4.0
9V1 8.5 9.6 6 15 3.8 5.5 7.0 5 150 0.5 6.0 3.0
10 9.4 10.6 8 20 4.5 6.4 8.0 5 90 0.2 7.0 3.0
11 10.4 11.6 10 20 5.4 7.4 9.0 5 85 0.1 8.0 2.5
12 11.4 12.7 10 25 6.0 8.4 10.0 5 85 0.1 8.0 2.5
13 12.4 14.1 10 30 7.0 9.4 11.0 5 80 0.1 8.0 2.5
15 13.8 15.6 10 30 9.2 11.4 13.0 5 75 0.05 10.5 2.0
16 15.3 17.1 10 40 10.4 12.4 14.0 5 75 0.05 11.2 1.5
18 16.8 19.1 10 45 12.4 14.4 16.0 5 70 0.05 12.6 1.5
20 18.8 21.2 15 55 14.4 16.4 18.0 5 60 0.05 14.0 1.5
22 20.8 23.3 20 55 16.4 18.4 20.0 5 60 0.05 15.4 1.25
24 22.8 25.6 25 70 18.4 20.4 22.0 5 55 0.05 16.8 1.25
2005 Feb 03 5
NXP Semiconductors Product data sheet
Voltage regulator diodes BZV49 series
27 25.1 28.9 25 80 21.4 23.4 25.3 2 50 0.05 18.9 1.0
30 28.0 32.0 30 80 24.4 26.6 29.4 2 50 0.05 21.0 1.0
33 31.0 35.0 35 80 27.4 29.7 33.4 2 45 0.05 23.1 0.9
36 34.0 38.0 35 90 30.4 33.0 37.4 2 45 0.05 25.2 0.8
39 37.0 41.0 40 130 33.4 36.4 41.2 2 45 0.05 27.3 0.7
43 40.0 46.0 45 150 37.6 41.2 46.6 2 40 0.05 30.1 0.6
47 44.0 50.0 50 170 42.0 46.1 51.8 2 40 0.05 32.9 0.5
51 48.0 54.0 60 180 46.6 51.0 57.2 2 40 0.05 35.7 0.4
56 52.0 60.0 70 200 52.2 57.0 63.8 2 40 0.05 39.2 0.3
62 58.0 66.0 80 215 58.8 64.4 71.6 2 35 0.05 43.4 0.3
68 64.0 72.0 90 240 65.6 71.7 79.8 2 35 0.05 47.6 0.25
75 70.0 79.0 95 255 73.4 80.2 88.6 2 35 0.05 52.5 0.2
BZV49-
CXXX
WORKING
VOLTAGE
V
Z
(V)
at I
Ztest
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
see Figs 4 and 5
TEST
CURRENT
I
Ztest
(mA)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
at V
R
= 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100 μs;
T
amb
= 25 °C
I
R
(μA)
V
R
(V)
MIN. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. MAX.
P1-P3P4-P6P7-P9P10-P11

BZV49-C11,115

Mfr. #:
Buy BZV49-C11,115
Manufacturer:
Nexperia
Description:
Zener Diodes DIODE ZENER 5 PCT
Lifecycle:
New from this manufacturer.
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