EMF17T2R Datasheet EMF17T2R | P1-P3

EMF17 / UMF17N

Transistors

Rev.A 1/4

Power management (dual transistors)

EMF17 / UMF17N

2SA1774 and DTC123EE are housed independently in a EMT or UMT package.

zApplication

Power management circuit

zFeatures

1) Power switching circuit in a single package.

2) Mounting cost and area can be cut in half.

zStructure

Silicon epitaxial planar transistor

zEquivalent circuits

R

1

R

2

DTr2 Tr1

(1)(2)(3)

(4) (5) (6)

R

1

=2.2kΩ

R

2

=2.2kΩ

zExternal dimensions (Unit : mm)

ROHM : EMT6

EMF17

ROHM : UMT6

EIAJ : SC-88

UMF17N

Abbreviated symbol :F17

Abbreviated symbol : F17

0.22

1.2

1.6

(

1

)

(

2

)(

5

)

(

3

)

(

6

)

(

4

)

0.13

0.5

1.0

1.6

Each lead has same dimensions

0to0.1

(

6

)

2.0

1.3

0.9

0.15

0.7

0.1Min.

2.1

0.65

0.2

1.25

(

1

)

0.65

(

4

)

(

3

)

(

2

)

(

5

)

Each lead has same dimensions

zPackage, marking, and packaging specifications

Type UMF17N

UMT6

F17

TR

3000

Package

Marking

Code

Basic ordering unit(pieces)

EMF17

EMT6

F17

T2R

8000

EMF17 / UMF17N

Transistors

Rev.A 2/4

zAbsolute maximum ratings (Ta=25°C)

Tr1

Parameter Symbol

V

CBO

V

CEO

V

EBO

I

C

Tj

Tstg

P

C

Limits

−60

−50

−6

−150

150

−55 to +150

150 (TOTAL)

Unit

V

mA

°C

mW

∗

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

Collector power dissipation

∗ 120mW per element must not be exceeded.

DTr2

Parameter

∗1 Characteristics of built-in transistor.

∗2 Each terminal mounted on a recommended land.

Symbol

V

CC

V

IN

I

C

I

O

P

C

Tj

Tstg

Limits

50

−10 to +20

100

150(TOTAL)

150

−55 to +150

∗1

∗2

Unit

V

mA

mW

°C

Supply voltage

Input voltage

Collector current

Output current

Power dissipation

Junction temperature

Range of storage temperature

zElectrical characteristics (Ta=25°C)

Tr1

Parameter Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

f

T

Cob

Min.

−60

−50

−6

−

180

−

140

4

−

−0.1

390

−0.5

−

5

VI

C

= −50µA

I

C

= −1mA

I

E

= −50µA

V

CB

= −60V

V

EB

= −6V

V

CE

= −6V, I

C

= −1mA

V

CE

= −12V, I

E

= 2mA, f = 100MHz

I

C

/I

B

= −50mA/−5mA

V

CB

= −12V, I

E

= 0A, f = 1MHz

V

µA

−

V

MHz

pF

Typ. Max. Unit Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance

DTr2

Parameter Symbol Min. Typ. Max. Unit Conditions

∗

Transition frequency f

T

−

250

−

1.54 2.86

MHz

V

CE

=10V, I

E

=−5mA, f=100MHz

∗ Characteristics of built-in transistor.

V

I(off)

−−0.5

V

CC

=5V, I

O

=100µA

Input voltage

V

I(on)

3.0

−−

V

O

=0.3V, I

O

=20mA

V

O(on)

−

100 300

mV

V

O

=10mA, I

I

=0.5mA

Output voltage

I

−−

3.8

mA V

I

=5V

Input current

I

O(off)

−−

0.5

µAV

CC

=50V, V

I

=0V

Output current

R

1

2.2

kΩ

−

Input resistance

G

I

20 −−

− V

O

=5V, I

O

=20mA

DC current gain

−

R

2

/R

1

0.8 1.0 1.2

−

Resistance ratio

EMF17 / UMF17N

Transistors

Rev.A 3/4

zElectrical characteristic curves

Tr1

-0.2

COLLECTOR CURRENT : Ic

(mA)

-50

-20

-10

-5

-2

-1

-0.5

-0.2

-0.1

-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6

VCE = −6V

BASE TO EMITTER VOLTAGE : VBE

(V)

Fig.1 Grounded emitter propagation

characteristics

Ta = 100°C

25°C

−

40°C

-0.4

-4

-8

-1.20

-2

-6

-10

-0.8 -1.6 -2.0

-3.5µA

-7.0

-10.5

-14.0

-17.5

-21.0

-24.5

-28.0

-31.5

I

B

= 0

Ta = 25°C

-35.0

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.2 Grounded emitter output

characteristics ( Ι )

-40

-80

-5-3 -4-2-1

-20

-60

-100

0

IB = 0

Ta = 25°C

COLLECTOR CURRENT : IC

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.3 Grounded emitter output

characteristics ( ΙΙ )

-50µA

-100

-150

-200

-250

-500

-450

-400

-350

-300

500

200

100

50

-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

DC CURRENT GAIN : h

FE

Ta = 25°C

V

CE

= -5V

-3V

-1V

COLLECTOR CURRENT : I

C

(mA)

Fig.4 DC current gain vs. collector

current ( Ι )

500

200

100

50

-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(mA)

Fig.5 DC current gain vs. collector

current ( ΙΙ )

V

CE

= -6V

Ta = 100°C

-40°C

25°C

-0.1

-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

-1

-0.5

-0.2

-0.05

Ta = 25°C

COLLECTOR SATURATION VOLTAGE : V

CE(sat) (V)

COLLECTOR CURRENT : I

C (mA)

Fig.6 Collector-emitter saturation

voltage vs. collector current ( Ι )

I

C

/I

B

= 50

20

10

-0.1

-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100

-1

-0.5

-0.2

-0.05

COLLECTOR SATURATION VOLTAGE : V

CE(sat) (V)

COLLECTOR CURRENT : I

C (mA)

Fig.7 Collector-emitter saturation

voltage vs. collector current ( ΙΙ )

l

C

/l

B

= 10

Ta = 100°C

25°C

-40°C

50 1000.5 20

50

100

200

500

1000

12 510

EMITTER CURRENT : I

E

(mA)

TRANSITION FREQUENCY : f

T

(MHz)

Fig.8 Gain bandwidth product vs.

emitter current

Ta = 25°C

V

CE

= -12V

COLLECTOR TO BASE VOLTAGE : V

CB

(V)

EMITTER TO BASE VOLTAGE : V

EB

(V)

COLLECTOR OUTPUT CAPACITANCE : Cob (

pF)

EMITTER INPUT CAPACITANCE : Cib (

pF)

Collector output capacitance vs.

Emitter input capacitance vs.

collector-base voltage

emitter-base voltage

Fig.9

-0.5 -20

2

5

10

-1 -2 -5 -10

20

Cib

Cob

Ta = 25

°C

f

=

1MHz

I

E = 0A

I

C = 0A

EMF17T2R

EMF17T2R

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