DCX68/-25
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary
PNP Type Available (DCX69)
• Ideally
Suited for Automated Assembly Processes
• Ideal for Medium Pow
er Switching or Amplification Applications
• Lead Free By
Design/RoHS Compliant (Note 1)
• "Green" Dev
ice (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL F
lammability Classification Rating 94V-0
• Moisture Sensitivity
: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
NEW PRODUCT
SOT89-3L
3
1
2,4
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
B
A
S
E
4
3
2
1
C
C
B
E
T
O
P
V
I
E
W
Schematic and Pin Configuration
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
25 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
5.0 V
Collector Current
I
C
1.0 A
Peak Pulse Current
I
CM
2.0 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25°C P
D
1 W
Thermal Resistance, Junction to Ambient Air (Note 3) @T
A
= 25°C
R
θ
JA
125 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
25
⎯ ⎯
V
I
C
= 100μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
20
⎯ ⎯
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
5.0
⎯ ⎯
V
I
E
= 100μA, I
C
= 0
Collector-Base Cutoff Current
I
CBO
⎯ ⎯
0.1
10
μA
V
CB
= 25V, I
E
= 0
V
CB
= 25V, I
E
= 0, T
A
= 150°C
Emitter-Base Cutoff Current
I
EBO
⎯ ⎯
10
μA
V
EB
= 5.0V, I
C
= 0
ON CHARACTERISTICS (Note 4)
DCX68, DCX68-25
50
60
⎯
⎯
V
CE
= 10V, I
C
= 5.0mA
V
CE
= 1.0V, I
C
= 1.0A
DCX68 85 375
V
CE
= 1.0V, I
C
= 500mA
DC Current Gain
DCX68-25
h
FE
160
⎯
375
⎯
V
CE
= 1.0V, I
C
= 500mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯ ⎯
0.5 V
I
C
= 1.0A, I
B
= 100mA
Base-Emitter Turn-On Voltage
V
BE(ON)
⎯ ⎯
1.0 V
I
C
= 1.0A, V
CE
= 1.0V
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
⎯
330
⎯
MHz
V
CE
= 5.0V, I
C
= 100mA,
f = 100MHz
Output Capacitance
C
obo
⎯ ⎯
25 pF
V
CB
= 10V, I
E
= 0, f = 1MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. D
uty cycle ≤2%.
DS31163 Rev. 4 - 2
1 of 4
www.diodes.com
DCX68/-25
© Diodes Incorporated
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