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2N6518TA

P1-P3
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
2N6518
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
• Refer to 2N6520 for graphs
Electrical Characteristics
T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -250 V
V
CEO
Collector-Emitter Voltage -250 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -500 mA
I
B
Base Current -250 mA
P
C
Collector Power Dissipation 625 mW
Derate above 25°C5mW/°C
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
* Collector-Base Breakdown Voltage I
C
= -100µA, I
E
=0 -250 V
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= -1mA, I
B
=0 -250 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10µA, I
C
=0 -5 V
I
CBO
Collector Cut-off Current V
CB
= -150V, I
E
=0 -50 nA
I
EBO
Emitter Cut-off Current V
EB
= -4V, I
C
=0 -50 nA
h
FE
* DC Current Gain V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -100mA
35
50
50
45
25
300
220
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
I
C
= -50mA, I
B
= -5mA
-0.30
-0.35
-0.50
-1
V
V
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
-0.75
-0.85
-0.90
V
V
V
V
BE
(on) Base-Emitter On Voltage V
CE
= -10V, I
C
= -100mA -2 V
f
T
* Current Gain Bandwidth Product V
CE
= -20V, I
C
= -10mA, f=20MHz 40 200 MHz
C
ob
Output Capacitance V
CB
= -20V, I
E
=0, f=1MHz 6 pF
C
EB
Emitter-Base Capacitance V
EB
= -0.5V, I
C
=0, f=1MHz 100 pF
t
ON
Turn On Time V
BE
(off)= -2V, V
CC
= -100V
I
C
= -50mA, I
B1
= -10mA
200 ns
t
OFF
Turn Off Time V
CC
= -100V, I
C
= -50mA
I
B1
=I
B2
=10mA
3.5 ns
2N6518
High Voltage Transistor
• Collector-Emitter Voltage: V
CEO
= -250V
• Collector Dissipation: P
C
(max)=625mW
• Complement to 2N6515
1. Emitter 2. Base 3. Collector
TO-92
1
0.46
±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27
±0.20
]
1.27TYP
[1.27
±0.20
]
3.60
±0.20
14.47
±0.40
1.02
±0.10
(0.25)
4.58
±0.20
4.58
+0.25
–0.15
0.38
+0.10
–0.05
0.38
+0.10
–0.05
TO-92
Package Dimensions
2N6518
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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P1-P3

2N6518TA

Mfr. #:
Buy 2N6518TA
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT PNP Si Transistor Epitaxial
Lifecycle:
New from this manufacturer.
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