IRG4BC20SPbF
www.irf.com 5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0 5 10 15 20 25 30
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V = 400V
I = 10A
CC
C
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
°
R = 50Ohm
V = 15V
V = 480V
G
GE
CC
I = A
20
C
I = A
10
C
I = A
5
C
Ω
1 10 100
0
200
400
600
800
1000
V , Collector-to-Emitter Voltage (V)
C, Capacitance (pF)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies ge gc , ce
res gc
oes ce gc
C
ies
C
oes
C
res
5.0 A
0 10 20 30 40 50
2.00
2.04
2.08
2.12
2.16
2.20
R , Gate Resistance (Ohm)
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 10A
CC
GE
J
C
°
( Ω )
