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RS1AHE3/5AT

P1-P3P4-P4
RS1A, RS1B, RS1D, RS1G, RS1J, RS1K
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
1
Document Number: 88707
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Fast Switching Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Fast switching for high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
50 V, 100 V, 200 V, 400 V, 600 V,
800 V
I
FSM
30 A
t
rr
150 ns, 250 ns, 500 ns
V
F
1.3 V
T
J
max. 150 °C
Package DO-214AC (SMA)
Diode variation Single die
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL RS1A RS1B RS1D RS1G RS1J RS1K UNIT
Device marking code RA RB RD RG RJ RK
Maximum repetitive peak reverse voltage V
RRM
50 100 200 400 600 800 V
Maximum RMS voltage V
RMS
35 70 140 280 420 500 V
Maximum DC blocking voltage V
DC
50 100 200 400 600 800 V
Maximum average forward rectified current at T
L
= 90 °C I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
RS1A, RS1B, RS1D, RS1G, RS1J, RS1K
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
2
Document Number: 88707
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL RS1A RS1B RS1D RS1G RS1J RS1K UNIT
Maximum instantaneous
forward voltage
1.0 A V
F
1.3 V
Maximum DC reverse current at
rated DC blocking voltage
T
A
= 25 °C
I
R
5.0
μA
T
A
= 125 °C 50
Maximum reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
150 250 500 ns
Typical junction capacitance 4.0 V, 1 MHz C
J
10 7.0 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL RS1A RS1B RS1D RS1G RS1J RS1K UNIT
Typical thermal resistance
R
JA
(1)
105
°C/W
R
JL
(1)
32
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
RS1J-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel
RS1J-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
RS1JHE3_A/H
(1)
0.064 H 1800 7" diameter plastic tape and reel
RS1JHE3_A/I
(1)
0.064 I 7500 13" diameter plastic tape and reel
Resistive or Inductive Load
P. C . B . M o unted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
1.2
1.0
0.4
0
0 20 40 60 80 100 120 140 160 180
Lead Temperature (°C)
Average Forward Rectified Current (A)
0.8
0.6
0.2
T
L
= 90 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
1 10 100
50
40
30
20
10
0
Peak Forward Surge Current (A)
RS1A, RS1B, RS1D, RS1G, RS1J, RS1K
www.vishay.com
Vishay General Semiconductor
Revision: 23-Feb-16
3
Document Number: 88707
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
T
J
= 125 °C
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
100
10
1
0.1
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
0 20406080100
Instantaneous Reverse Current (µA)
100
10
1
0.1
0.01
RS1A thru RS1G
100
10
1
1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
RS1J thru RS1K
Mo
unted on 0.2" x 0.2" (5 mm x 5 mm)
Copper Pad Area
0.01 0.1 1 10
100
10
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
P1-P3P4-P4

RS1AHE3/5AT

Mfr. #:
Buy RS1AHE3/5AT
Manufacturer:
Vishay
Description:
DIODE GEN PURP 50V 1A DO214AC
Lifecycle:
New from this manufacturer.
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