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HMC490

P1-P3P4-P6P7-P8
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIER - CHIP
4
HMC490
v03.0213
GaAs pHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 17 GHz
Reverse Isolation vs. Temperature
-70
-60
-50
-40
-30
-20
-10
0
10 11 12 13 14 15 16 17 18
+25 C +85 C -55 C
ISOLATION (dB)
FREQUENCY (GHz)
Absolute Maximum Ratings
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd1, Vdd2, Vdd3) +5.5 Vdc
Gate Bias Voltage (Vgg1, Vgg2, Vgg3) -4 to 0 Vdc
RF Input Power (RFIN)(Vdd = +5 Vdc) +10 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 19.2 mW/°C above 85 °C)
1.73 W
Thermal Resistance
(channel to die bottom)
52 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Vdd (Vdc) Idd (mA)
+4.5 191
+5.0 200
+5.5 208
+3.0 189
+3.5 200
+4.0 208
Note: Amplier will operate over full voltage ranges shown
above. Vgg adjusted to achieve Idd= 200 mA at +5.0V and
+3.5V.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIER - CHIP
5
HMC490
v03.0213
GaAs pHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 17 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Die Packaging Information
[1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
LOW NOISE AMPLIFIER - CHIP
6
HMC490
v03.0213
GaAs pHEMT MMIC LOW NOISE
HIGH IP3 AMPLIFIER, 12 - 17 GHz
Assembly Diagram
Pad Descriptions
Pad Number Function Description Interface Schematic
1,8, 7 Vgg1, 2, 3
Gate control for amplier. Adjust to achieve Id of 200 mA.
Please follow “MMIC Amplier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF and 0.01
µF are required.
2 RFIN
This pad is AC coupled
and matched to 50 Ohms.
3, 4, 5 Vdd1, 2, 3
Power Supply Voltage for the amplier. External bypass capacitors
of 100 pF and 0.01 µF are required.
6 RFOUT
This pad is AC coupled
and matched to 50 Ohms.
Die Bottom GND Die Bottom must be connected to RF/DC ground.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
P1-P3P4-P6P7-P8

HMC490

Mfr. #:
Buy HMC490
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier lo Noise hi IP3 amp Chip, 12 - 17 GHz
Lifecycle:
New from this manufacturer.
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