AMPLIFIERS - LINEAR & POWER - CHIP
3
3 - 1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 81 - 86 GHz
v04.0511
General Description
Features
Functional Diagram
Gain: 22 dB
P1dB: +17.5 dBm
Supply Voltage: +4V
50 Ohm Matched Input/Output
Die Size: 2.65 x 1.6 x 0.05 mm
Typical Applications
This HMC-AUH317 is ideal for:
• Short Haul / High Capacity Links
• Wireless LAN Bridges
• Military & Space
• E-Band Communication Systems
The HMC-AUH317 is a high dynamic range, three
stage GaAs HEMT MMIC Medium Power Amplier
which operates between 81 and 86 GHz. The HMC-
AUH317 provides 22 dB of gain, and an output power
of +17.5 dBm at 1 dB compression from a +4V supply
voltage. All bond pads and the die backside are Ti/Au
metallized and the amplier device is fully passivated
for reliable operation. The HMC-AUH317 GaAs
HEMT MMIC Medium Power Amplier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
HMC-AUH317
Electrical Specications, T
A
= +25° C, Vdd1=Vdd2 = 4V, Idd1 = Idd2 = 80 mA
[2]
Parameter Min. Typ. Max. Units
Frequency Range 81 - 86 GHz
Gain 19 22 dB
Input Return Loss 9 dB
Output Return Loss 5 dB
Output power for 1dB Compression (P1dB) 17.5 dBm
Saturated Output Power (Psat) 19.5 dBm
Supply Current (Idd1+Idd2) 160 mA
[1] Unless otherwise indicated, all measurements are from probed die.
[2] Adjust Vgg1, Vgg2 independently between -0.8V to +0.3V (typically -0.1V) to achieve drain currents of Idd1 = 80 mA and Idd2 = 80 mA.
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