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BSS308PEH6327XTSA1
P1-P3
P4-P6
P7-P9
BSS308PE
1 Power dissipation
2 Drain current
P
tot
=f(
T
A
)
I
D
=f(
T
A
);
V
GS
≥
10 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
A
=25 °C;
D
=0
Z
thJA
=f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
2
10
1
10
0
10
-1
10
1
10
0
10
-1
10
-2
10
-3
10
-4
V
DS
[V]
I
D
[A]
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
2
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
3
10
2
10
1
10
0
10
-1
t
p
[s]
Z
thJA
[K/W]
0
0.125
0.25
0.375
0.5
0
40
80
120
160
T
A
[°C]
P
tot
[W]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
0
20
40
60
80
100
120
140
160
T
A
[°C]
I
D
[A]
Rev 2.03
page 4
2011-07-08
BSS308PE
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(
V
DS
);
T
j
=25 °C
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
g
fs
=f(
I
D
);
T
j
=25 °C
0
2
4
6
8
012345
6
I
D
[A]
g
fs
[S]
2.8 V
3 V
3.3 V
3.5 V
4 V
4.5 V
10 V
0
1
2
3
4
5
6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
[V]
I
D
[A]
25 °C
150 °C
0
1
2
3
4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
[V]
I
D
[A]
2.8 V
3 V
3.3 V
3.5 V
4 V
4.5 V
10 V
0
50
100
150
200
250
300
350
400
0
0.5
1
1.5
2
2.5
3
3.5
4
I
D
[A]
R
DS(on)
[m
Ω
]
Rev 2.03
page 5
2011-07-08
BSS308PE
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=-2 A;
V
GS
=-10 V
V
GS(th)
=f(
T
j
);
V
DS
=V
GS
;
I
D
=11 µA
parameter:
I
D
11 Typ. capacitances
12 Forward characteristics of reverse diode
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz; T
j
=25°C
I
F
=f(
V
SD
)
parameter:
T
j
typ
98 %
0
20
40
60
80
100
120
140
-60
-20
20
60
100
140
180
T
j
[°C]
R
DS(on)
[m
Ω
]
typ
98 %
2 %
0
0.4
0.8
1.2
1.6
2
2.4
-60
-20
20
60
100
140
180
T
j
[°C]
V
GS(th)
[V]
Ciss
Coss
Crss
10
0
10
1
10
2
10
3
0
5
10
15
20
V
DS
[V]
C
[pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10
1
10
0
10
-1
10
-2
10
-3
0
0.4
0.8
1.2
1.6
V
SD
[V]
I
F
[A]
Rev 2.03
page 6
2011-07-08
P1-P3
P4-P6
P7-P9
BSS308PEH6327XTSA1
Mfr. #:
Buy BSS308PEH6327XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -30V -2A SOT-23-3
Lifecycle:
New from this manufacturer.
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BSS308PEH6327XTSA1