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BC856BS,135

P1-P3P4-P6P7-P9P10-P12P13-P13
BC856BS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 6 of 12
NXP Semiconductors
BC856BS
65 V, 100 mA PNP/PNP general-purpose transistor
V
CE
= −5V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 3. Per transistor: DC current gain as a function of
collector current; typical values
Fig 4. Per transistor: Collector current as a function
of collector-emitter voltage; typical values
V
CE
= −5 V; T
amb
=25°CI
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 5. Per transistor: Base-emitter voltage as a
function of collector current; typical values
Fig 6. Per transistor: Base-emitter saturation voltage
as a function of collector current; typical
values
006aaa541
200
400
600
h
FE
0
I
C
(mA)
−10
−2
−10
3
−10
2
−10
−1
−10−1
(1)
(2)
(3)
006aaa540
V
CE
(V)
0 −10−8−4 −6−2
−0.08
−0.12
−0.04
−0.16
−0.20
I
C
(A)
0
−0.25
I
B
(mA) = −2.5
−0.5
−0.75
−1.0
−1.25
−1.5
−1.75
−2.0
−2.25
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−0.6
−0.8
−1
V
BE
(V)
−0.4
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
006aaa542
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
−0.5
−0.9
−1.3
−0.3
−0.7
−1.1
V
BEsat
(V)
−0.1
(1)
(2)
(3)
BC856BS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 7 of 12
NXP Semiconductors
BC856BS
65 V, 100 mA PNP/PNP general-purpose transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
V
CE
= −5 V; T
amb
=25°C
Fig 7. Per transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8. Per transistor: Transition frequency as a
function of collector current; typical values
f = 1 MHz; T
amb
=25°C f = 1 MHz; T
amb
=25°C
Fig 9. Per transistor: Collector capacitance as a
function of collector-base voltage; typical
values
Fig 10. Per transistor: Emitter capacitance as a
function of emitter-base voltage; typical values
006aaa543
−1
−10
−1
−10
V
CEsat
(V)
−10
−2
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
(1)
(2)
(3)
I
C
(mA)
−1 −10
2
−10
006aaa545
10
2
10
3
f
T
(MHz)
10
V
CB
(V)
0 −10−8−4 −6−2
006aab623
4
6
2
8
10
C
c
(pF)
0
006aaa547
V
EB
(V)
0 −6−4−2
9
11
7
13
15
C
e
(pF)
5
BC856BS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 11 August 2009 8 of 12
NXP Semiconductors
BC856BS
65 V, 100 mA PNP/PNP general-purpose transistor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
Fig 11. Package outline SOT363 (SC-88)
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
132
465
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
BC856BS SOT363 4 mm pitch, 8 mm tape and reel; T1
[2]
-115 -135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125 -165
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BC856BS,135

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Buy BC856BS,135
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PNP/PNP -65 V -100mA
Lifecycle:
New from this manufacturer.
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