DF2S5.6FS,L3M Datasheet DF2S5.6FS,L3M | P1-P3

DF2S5.6FS

1

ESD Protection Diodes Silicon Epitaxial Planar

DF2S5.6FS

Start of commercial production

2003-04

1.

1. Applications

Applications

• ESD Protection

Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other

purpose, including, but not limited to, voltage regulation.

2.

2. Packaging and Internal Circuit

Packaging and Internal Circuit

SOD-923

1: Cathode

2: Anode

fSC

1: Cathode

2: Anode

The SOD-923 package is recommended.

Package

SOD-923

fSC

Product name

DF2S5.6FS,L3M (Note 1)

DF2S5.6FS,L3J , DF2S5.6FS,L3F

Note 1: The product name of the devices housed in the SOD-923 package are suffixed with

the "M".

2014-07-09

Rev.3.0

DF2S5.6FS

2

3.

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

Absolute Maximum Ratings (Note) (Unless otherwise specified, T

a

= 25

= 25



)

)

Characteristics

Electrostatic discharge voltage (IEC61000-4-2)(Contact)

Junction temperature

Storage temperature

Symbol

V

ESD

T

j

T

stg

Rating

±30

150

-55 to 150

Unit

kV



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

4.

4. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

a

= 25

= 25



)

)

V

RWM

: Working peak reverse

voltage

V

Z

: Zener voltage

V

BR

: Reverse breakdown voltage

Z

: Dynamic impedance

I

Z

: Zener current

I

BR

: Reverse breakdown current

I

R

: Reverse current

V

C

: Clamp voltage

I

PP

: Peak pulse current

R

DYN

: Dynamic resistance

I

F

: Forward current

V

F

: Forward voltage

Fig.

Fig. 4.1

4.1

4.1 Definitions of Electrical Characteristics

Definitions of Electrical Characteristics

Characteristics

Working peak reverse voltage

Zener voltage

(Reverse breakdown voltage)

Dynamic impedance

Reverse current

Total capacitance

Symbol

V

RWM

V

Z

(V

BR

)

Z

I

R

C

t

Note Test Condition



I

Z

= 5 mA

(I

BR

)

I

Z

= 5 mA

(I

BR

)

V

RWM

= 3.5 V

V

R

= 0 V, f = 1 MHz

Min



5.3



Typ.



5.6



40

Max

3.5

6.0

30

1.0



Unit

V

Ω

µA

pF

2014-07-09

Rev.3.0

DF2S5.6FS

3

5.

5. Guaranteed ESD Protection (Note)

Guaranteed ESD Protection (Note)

Test Condition

IEC61000-4-2 (Contact discharge)

ESD Protection

±30 kV

Note: Criterion: No damage to devices.

6.

6. Marking

Marking

Fig.

Fig. 6.1

6.1

6.1 Marking

Marking

7.

7. Land Pattern Dimensions (for reference only)

Land Pattern Dimensions (for reference only)

Fig.

Fig. 7.1

7.1

7.1 SOD-923 (unit: mm)

SOD-923 (unit: mm)

SOD-923 (unit: mm) Fig.

Fig.

Fig. 7.2

7.2

7.2 fSC (unit: mm)

fSC (unit: mm)

2014-07-09

Rev.3.0

DF2S5.6FS,L3M

DF2S5.6FS,L3M

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