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ESH2CHE3/5BT

P1-P3P4-P5
ESH2B, ESH2C, ESH2D
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
1
Document Number: 84649
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction
• Ideal for automated placement
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converter and inverter for
both consumer and automotive.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
2.0 A
V
RRM
100 V, 150 V, 200 V
t
rr
25 ns
V
F
at I
F
= 2 A 0.93 V
T
J
max. 175 °C
Package DO-214AA (SMB)
Diode variations Single die
DO-214AA (SMB)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ESH2B ESH2C ESH2D UNIT
Device marking code EHB EHC EHD
Maximum repetitive peak reverse voltage V
RRM
100 150 200 V
Maximum RMS voltage V
RMS
70 105 140 V
Maximum DC blocking voltage V
DC
100 150 200 V
Maximum average forward rectified current (fig. 1) I
F(AV)
2.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
60 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
ESH2B, ESH2C, ESH2D
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
2
Document Number: 84649
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
Units mounted on PCB with 8.0 mm x 8.0 mm land areas
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage I
F
= 2 A V
F
(1)
0.93 V
Maximum DC reverse current
at rated DC blocking voltage
T
A
= 25 °C
I
R
2.0
µA
T
A
= 125 °C 50
Maximum reverse recovery time I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A t
rr
25 ns
Typical reverse recovery time
I
F
= 2 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
t
rr
35
ns
T
J
= 100 °C 55
Typical stored charge
I
F
= 2 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
Q
rr
20
nC
T
J
= 100 °C 35
Typical junction capacitance 4.0 V, 1 MHz C
J
30 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ESH2B ESH2C ESH2D UNIT
Typical thermal resistance
R
JA
(1)
65
°C/W
R
JL
(1)
20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ESH2D-E3/52T 0.096 52T 750 7" diameter plastic tape and reel
ESH2D-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel
ESH2DHE3/52T
(1)
0.096 52T 750 7" diameter plastic tape and reel
ESH2DHE3/5BT
(1)
0.096 5BT 3200 13" diameter plastic tape and reel
ESH2DHE3_A/H
(1)
0.096 H 750 7" diameter plastic tape and reel
ESH2DHE3_A/I
(1)
0.096 I 3200 13" diameter plastic tape and reel
ESH2B, ESH2C, ESH2D
www.vishay.com
Vishay General Semiconductor
Revision: 25-Feb-16
3
Document Number: 84649
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0 25 50 75 100 125 150 175
2.5
2.0
1.5
1.0
0.5
0
Lead Temperature (°C)
Average Forward Rectified Current (A)
Number of Cycles at 60 Hz
Peak Forward Surge
Current (A)
60
50
40
30
20
10
0
1 10 100
Instantaneous Forward Voltage (V)
0.2 0.4 0.6 0.8 1.0 1.2 1.4
100
10
1
0.1
0.01
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
Instantaneous Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
20 40 60 80 100
1000
100
10
1
0.1
0.01
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
Instantaneous Reverse Leakage
Current (µA)
Reverse Voltage (V)
Junction Capacitance (pF)
100
10
1
0.1 1 10 100
0.01 0.1 1 10 100
100
10
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

ESH2CHE3/5BT

Mfr. #:
Buy ESH2CHE3/5BT
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers RECOMMENDED ALT 78-ESH2CHE3_A/I
Lifecycle:
New from this manufacturer.
Delivery:
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