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BAT46-TAP

P1-P3P4-P4
BAT46
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 09-May-12
1
Document Number: 85662
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diode
MECHANICAL DATA
Case: DO-35
Weight: approx. 125 mg
Cathode band color: Black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
• For general purpose applications
• This diode features very low turn-on voltage and
fast switching. This device is protected by a PN
junction guard ring against excessive voltage,
such as electrostatic discharges
• This diode is also available in the SOD-123 case
with type designation BAT46W-V and in the
MiniMELF case with type designations LL46
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
BAT46 BAT46-TR or BAT46-TAP Single diode BAT46 Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
100 V
Forward continuous current
(1)
I
F
150 mA
Repetitive peak forward current
(1)
t
p
< 1 s, < 0.5 I
FRM
350 mA
Surge forward current
(1)
t
p
< 10 ms I
FSM
750 mA
Power dissipation
(1)
T
amb
= 80 °C P
tot
150 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
Valid provided that electrodes are
kept at ambient temperature
R
thJA
300 K/W
Junction temperature T
j
125 °C
Ambient operating temperature range T
amb
- 65 to + 125 °C
Storage temperature range T
stg
- 65 to + 150 °C
BAT46
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 09-May-12
2
Document Number: 85662
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test; t
p
300 μs, , < 2 %
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Typical Instantaneous Forward Characteristics
Fig. 2 - Typical Reverse Characteristics
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 100 μA (pulsed) V
(BR)
100 V
Leakage current
(1)
V
R
= 1.5 V I
R
0.5 μA
V
R
= 1.5 V, T
j
= 60 °C I
R
5μA
V
R
= 10 V I
R
0.8 μA
V
R
= 10 V, T
j
= 60 °C I
R
7.5 μA
V
R
= 50 V I
R
2μA
V
R
= 50 V, T
j
= 60 °C I
R
15 μA
V
R
= 75 V I
R
5μA
V
R
= 75 V, T
j
= 60 °C I
R
20 μA
Forward voltage
(1)
I
F
= 0.1 mA V
F
250 mV
I
F
= 10 mA V
F
450 mV
I
F
= 250 mA V
F
1000 mV
Diode capacitance
V
R
= 0 V, f = 1 MHz C
D
10 pF
V
R
= 1 V, f = 1 MHz C
D
6pF
I- Forward Current (mA)
F
1000
100
10
1
0.1
0.01
1.2 1 0.8 0.6 0.4 0.2 0
18546
V
F
- Forward Voltage (V)
= 60 °CT
j
25 °C
18547
I- Reverse Leakage Current (µA)
R
0.01
0.1
1
10
100
020406080100
V
R
- Reverse Voltage (V)
T
j
= 60 °C
T
j
= 25 °C
0
50
100
150
200
250
0 25 50 75 100 125 150 175 200
T
amb
- Ambient Temperature (°C)
P
tot
- Power Dissipation (mW)
20134
BAT46
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 09-May-12
3
Document Number: 85662
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): DO-35
94 9366
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
Cathode Identication
1.7 [0.067]
1.3 [0.050]
3.1 min. [0.120]
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
P1-P3P4-P4

BAT46-TAP

Mfr. #:
Buy BAT46-TAP
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 100 Volt 150mA 750mA IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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