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IRF9956TRPBF

P1-P3P4-P6P7-P7
IRF9956PbF
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 4. Normalized On-Resistance
Vs. Temperature
0
20
40
60
80
100
25 50 75 100 125 150
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
I
TOP 0.89A
1.6A
BOTTOM 2.0A
D
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
2.2A
0
.00
0
.02
0
.04
0
.06
0
.08
0
.10
0
.12
0
.14
0
.16
03691215
A
I = 3.5A
D
GS
V , Gate-to-Source Voltage (V)
R
DS
(on) , Drain-to-Source On Resistance (Ω)
0
.04
0
.06
0
.08
0
.10
0
.12
0 2 4 6 8 10 12
A
I , Drain Current (A)
D
V = 10V
GS
V = 4.5V
GS
R
DS
(on) , Drain-to-Source On Resistance (Ω)
IRF9956PbF
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
0
50
100
150
200
250
300
350
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0 2 4 6 8 10
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D
1.8A
V = 10V
DS
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF9956PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MI N MAX
MIL LIME T ER SINCHES
MI N MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010]
A
6
7
K x 45°
8X L
8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT P RINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OUT LINE CONF ORMS T O JE DEC OUT LINE MS -012AA.
NOTES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070
]
DATE CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WEEK
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
A = ASSEMBLY SITE CODE
P1-P3P4-P6P7-P7

IRF9956TRPBF

Mfr. #:
Buy IRF9956TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT DUAL NCh 30V 3.5A
Lifecycle:
New from this manufacturer.
Delivery:
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