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DMN601DWK-7

P1-P3P4-P6
DMN601DWK
Document number: DS30656 Rev. 8 - 2
1 of 6
www.diodes.com
March 2015
© Diodes Incorporated
DMN601DWK
NEW P R ODUC T
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V
(BR)DSS
R
DS(ON)
max
60V
3Ω @ V
GS
= 5V
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Up To 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic. “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 leadframe
(Lead-Free Plating). Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN601DWK-7
SOT363
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2005
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
S
T
U
V
W
X
Y
Z
A
B
C
D
E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT363
Top View
ESD Protected up to 2kV
K7K YM
S
1
D
2
G
1
D
1
S
2
G
2
K7K YM
Top View
Internal Schematic
K7K = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
D
S
G
Gate Protection
Diode
Equivalent
Circuit
S
1
D
1
D
2
S
2
G
1
G
2
SOT363
DMN601DWK
Document number: DS30656 Rev. 8 - 2
2 of 6
www.diodes.com
March 2015
© Diodes Incorporated
DMN601DWK
NEW P R ODUC T
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
20
V
Drain Current (Note 5)
Continuous
I
D
305
800
mA
Pulsed (Note 6)
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
P
D
200
mW
Thermal Resistance, Junction to Ambient
R
θJA
625
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-65 to +150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60
V
V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current
I
DSS
1
µA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
10
µA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0
1.6
2.5
V
V
DS
= 10V, I
D
= 1mA
Static Drain-Source On-Resistance
R
DS(ON)
2.0
3.0
Ω
V
GS
= 10V, I
D
= 0.5A
V
GS
= 5V, I
D
= 0.05A
Forward Transfer Admittance
|Y
fs
|
80
ms
V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage
(Note 8)
V
SD
0.5
1.4
V
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
50
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
25
pF
Reverse Transfer Capacitance
C
rss
5.0
pF
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width 10µS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN601DWK
Document number: DS30656 Rev. 8 - 2
3 of 6
www.diodes.com
March 2015
© Diodes Incorporated
DMN601DWK
NEW P R ODUC T
0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I , DRAIN CURRENT (A)
D
1.2
1.4
3V
4V
6V
8V
10V
V = 10V
8V
6V
5V
4V
3V
GS
5V
V , GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
GS
0.01
0.10
1.00
1 1.5 2
2.5
3 3.5 4 4.5
5
I ,
D
DRAIN CURRENT (A)
T = 125 C°
A
T = 25 C
A
°
T = -25 C°
A
T = 75 C°
A
V = 10V
Pulsed
DS
T , CHANNEL TEMPERATURE (°C)
Figure 3 Gate Threshold Voltage vs. Channel Temperature
CH
0
0.5
1
1.5
2
-50
-25
0 25 50
75 100
125 150
V GATE THRESHOLD VOLTAGE (V)
GS(th),
V = 10V
I = 1mA
Pulsed
DS
D
0.1
I DRAIN CURRENT (A)
Figure 4 Static Drain-Source On-Resistance vs. Drain Current
D
,
1
10
0.001
0.01
0.1
1
T = 150 C°
A
T = 125 C
A
°
T = 85 C°
A
T = -55 C°
A
T = 25 C°
A
T = 0 C°
A
T = -25 C°
A
V = 10V
Pulsed
GS
R , STATIC DRAIN SOURCE
ON-RESISTANCE ( )
DS(ON)
1
I , DRAIN CURRENT (A)
Figure 5 Static Drain-Source On-Resistance vs. Drain Current
D
10
0.1
1
0.001 0.01
0.1
V = 5V
Pulsed
GS
T = 150 C
A
°
T = 125 C
A
°
T = 85°C
A
T = 25 C
A
°
T = -25 C
A
°
T = 0 C
A
°
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
0
V GATE SOURCE VOLTAGE (V)
Figure 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
GS,
1
2
3
4
5
6
7
0
2 4 6 8 10
12 14
16 18 20
I = 300mA
D
I = 150mA
D
T = 25°C
Pulsed
A
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(on)
P1-P3P4-P6

DMN601DWK-7

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Manufacturer:
Diodes Incorporated
Description:
MOSFET Dual N-Channel
Lifecycle:
New from this manufacturer.
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