T
C
[°C]
t [s]
0.001 0.01 0.1 1
0
2000
4000
6000
8000
011
10
4
10
5
6
0 25 50 75 100 125 150
0
100
200
300
I
TSM
[A]
I
TAVM
[A]
0 25 50 75 100 125 150
0 100 200 300
0
100
200
300
400
500
0 25 50 75 100 125 1500 200 400 600
0
500
1000
1500
2000
R
thKA
K/W
0.03
0.06
0.1
0.15
0.2
0.3
0.4
Circuit
B6
3xMCD255
3xMCC255 or
180 ° sin
120 °
60°
30°
DC
180 ° sin
120 °
60°
30°
DC
I
2
dt
[A
2
s]
t [ms]
I
TAVM
[A]
P
tot
[W]
T
A
[°C]
P
tot
[W]
I
DAVM
T]A[
A
[°C]
Fig. 1 Surge overload current
I
T(F)SM
: Crest value, t: duration
Fig. 2 I
2
dt versus time
Fig. 3 Max. forward current
at case temperature
Fig. 4 Power dissipation versus on-state current and
ambient temperature (per thyristor or diode)
Fig. 6 Three phase rectifier bridge: Power dissipation
vs. direct output current and ambient temperature
T
VJ
= 45°C
R
thKA
K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.0
6
5
4
3
1
limit
typ.
V
G
[V]
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
0.01 0.1 1 10
1
10
100
2
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
I
G
[A]
t
gd
[µs]
I
G
[A]
Fig. 5 Surge overload current
I
T(F)SM
: Crest value, t: duration
Fig. 7 Gate trigger delay time
T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
2: I
GT
, T
VJ
= 25°C
1: I
GT
,
T
VJ
= 140°C
I
GD
,
T
VJ
= 140°C
80 % V
RRM
T
VJ
= 45°C
50 Hz
T
VJ
= 140°C
T
VJ
= 140°C
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
20160301dData according to IEC 60747and per semiconductor unless otherwise specified
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