AO7400
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage
0.5 1 1.5 V
I
D(ON)
15 A
45 55
T
J
=125°C 70 84
50 65 mΩ
61 85 mΩ
g
FS
14 S
V
SD
0.75 1 V
I
S
1.5 A
C
iss
185 235 285 pF
C
oss
25 35 45 pF
C
rss
10 18 25 pF
R
g
2.1 4.3 6.5 Ω
Q
g
(10V) 10 12 nC
Q
g
(4.5V) 4.7 nC
Q
gs
0.95 nC
Q
gd
1.6 nC
t
D(on)
3.5 ns
t
r
1.5 ns
t
D(off)
17.5 ns
t
f
2.5 ns
t
rr
8.5 11 ns
Q
rr
2.6 3.5
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=1.7A
Reverse Transfer Capacitance
I
F
=1.7A, dI/dt=100A/µs
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
I
DSS
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
=±12V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=1.7A
V
GS
=2.5V, I
D
=1A
V
GS
=4.5V, I
D
=1.5A
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance
mΩ
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=15V, I
D
=1.7A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Body Diode Reverse Recovery Charge
I
F
=1.7A, dI/dt=100A/µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=8Ω,
R
GEN
=3Ω
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse ratin g.
Rev 5: May 2011 www.aosmd.com Page 2 of 5
