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H11G3W

P1-P3P4-P6
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Value Units
TOTAL DEVICE
T
STG
-55 to +150 °C
Storage Temperature
Operating Temperature T
OPR
-55 to +100 °C
Lead Solder Temperature T
SOL
260 for 10 sec °C
Total Device Power Dissipation @ T
A
= 25°C
P
D
260 mW
Derate above 25°C 3.5 mW/°C
Input-Output Isolation Voltage V
ISO
5300 Vac(rms)
EMITTER
I
F
60 mA
Forward Input Current
Reverse Input Voltage V
R
6.0 V
Forward Current - Peak (1µs pulse, 300pps) I
F
(pk) 3.0 A
LED Power Dissipation @ T
A
= 25°C
P
D
100 mW
Derate above 25°C 1.8 mW/°C
DETECTOR
Collector-Emitter Voltage
H11G1 V
CEO
100 V
H11G2 80
H11G3 55
Detector Power Dissipation @ T
A
= 25°C
P
D
200 mW
Derate above 25°C 2.67 mW/°C
FEATURES
• High BV
CEO
- Minimum 100 V for H11G1
- Minimum 80 V for H11G2
- Minimum 55 V for H11G3
• High sensitivity to low input current
Minimum 500 percent CTR at I
F
= 1 mA
• Low leakage current at elevated temperature
(maximum 100 µA at 80°C)
• Underwriters Laboratory (UL) recognized File# E90700
DESCRIPTION
The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a
gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor
which has an integral base-emitter resistor to optimize elevated temperature characteristics.
7/21/00 200045A
EMITTER
COLLECTOR
1
2
3
ANODE
CATHODE
4
5
6
BASE
N/C
HIGH VOLTAGE
PHOTODARLINGTON OPTOCOUPLERS
H11G1
H11G2
H11G3
APPLICATIONS
• CMOS logic interface
• Telephone ring detector
• Low input TTL interface
• Power supply isolation
• Replace pulse transformer
NOTE
All dimensions are in inches (millimeters)
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°C
Unless otherwise specified.)
7/21/00 200045A
Characteristic Test Conditions Symbol Device Min Typ** Max Unit
EMITTER
(I
F
= 10 mA) V
F
ALL 1.3 1.50 V
Forward Voltage
Forward Voltage Temp. V
F
ALL -1.8 mV/°C
Coefficient T
A
Reverse Breakdown Voltage (I
R
= 10 µA) BV
R
ALL 3.0 25 V
Junction Capacitance
(V
F
= 0 V, f = 1 MHz)
C
J
ALL 50 pF
(V
F
= 1 V, f = 1 MHz) ALL 65 pF
Reverse Leakage Current (V
R
= 3.0 V) I
R
ALL 0.001 10 µA
DETECTOR H11G1 100
Breakdown Voltage (I
C
= 1.0 mA, I
F
= 0) BV
CEO
H11G2 80
Collector to Emitter H11G3 55
H11G1 100 V
Collector to Base (I
C
= 100 µA)
BV
CBO
H11G2 80
H11G3 55
Emitter to Base BV
EBO
ALL 7 10
(V
CE
= 80 V, I
F
= 0) H11G1
Leakage Current
(V
CE
= 60 V, I
F
= 0) H11G2 100 nA
Collector to Emitter
(V
CE
= 30 V, I
F
= 0) I
CEO
H11G3
(V
CE
= 80 V, I
F
= 0, T
A
= 80°C) H11G1
100 µA
(V
CE
= 60 V, I
F
= 0, T
A
= 80°C) H11G2
INDIVIDUAL COMPONENT CHARACTERISTICS
DC Characteristic Test Conditions Symbol Device Min Typ** Max Unit
EMITTER
Current Transfer Ratio
(I
F
= 10 mA, V
CE
= 1 V) H11G1/2 100 (1000)
Collector to Emitter
CTR mA (%)
(I
F
= 1 mA, V
CE
= 5 V)
H11G1/2 5 (500)
H11G3 2 (200)
(I
F
= 16 mA, I
C
= 50 mA) H11G1/2 0.85 1.0
Saturation Voltage (I
F
= 1 mA, I
C
= 1 mA) V
CE (SAT)
H11G1/2 0.75 1.0 V
(I
F
= 20 mA, I
C
= 50 mA) H11G3 0.85 1.2
TRANSFER CHARACTERISTICS
Characteristic Test Conditions Symbol Device Min Typ** Max Unit
SWITCHING TIMES
(R
L
= 100 1, I
F
= 10 mA) t
on
ALL 5
Turn-on Time µs
Turn-off Time (V
CE
= 5 V) Pulse Width 6300 µs, f 630 Hz) t
off
ALL 100
TRANSFER CHARACTERISTICS
HIGH VOLTAGE
PHOTODARLINGTON OPTOCOUPLERS
H11G1, H11G2, H11G3
** All typical values at T
A
= 25°C
Fig. 1 Output Current vs. Input Current
I
F
- LED INPUT CURRENT(mA)
0.1 1 10
I
C
- NORMALIZED OUTPUT CURRENT
0.001
0.01
0.1
1
10
Normalized to:
V
CE
= 5 V
I
F
= 1 mA
I
C
- NORMALIZED OUTPUT CURRENT
Fig. 2 Normalized Output Current vs. Temperature
T
A
- AMBIENT TEMPERATURE (˚C)
-60 -40 -20 0 20 40 60 80 100 120
0.01
0.1
1
10
100
I
F
= 50 mA
I
F
= 5 mA
I
F
= 1 mA
I
F
= 0.5 mA
I
C
- NORMALIZED OUTPUT CURRENT
V
CE
- COLLECTOR - EMITTER VOLTAGE (V)
110
0.01
0.1
1
10
100
I
F
= 50 mA
I
F
= 10 mA
I
F
= 2 mA
I
F
= 1 mA
I
F
= 0.5 mA
Normalized to:
V
CE
= 5 V
I
F
= 1 mA
T
A
= 25˚C
Normalized to:
V
CE
= 5 V
I
F
= 1 mA
T
A
= 25˚C
Fig. 3 Output Current vs. Collector - Emitter Voltage
I
C
EO
- DARK CURRENT (nA)
T
A
- AMBIENT TEMPERATURE (˚C)
0 102030405060708090100
0.01
0.1
1
10
100
1000
Fig. 4 Collector-Emitter Dark Current
vs. Ambient Temperature
V
CE
= 30V
V
CE
= 10V
V
CE
= 80V
Fig. 5 Input Current
vs. Total Switching Speed (Typical Values)
t
on
+ t
off
- TOTAL SWITCHING SPEED (NORMALIZED)
0.1 1 10
I
F
- FORWARD CURRENT (mA)
0.1
1
10
Normalized to:
V
CC
= 5 V
I
F
= 10 mA
R
L
= 100 Ω
R
L
= 100 Ω R
L
= 1k ΩR
L
= 10 Ω
7/21/00 200045A
HIGH VOLTAGE
PHOTODARLINGTON OPTOCOUPLERS
H11G1, H11G2, H11G3
P1-P3P4-P6

H11G3W

Mfr. #:
Buy H11G3W
Manufacturer:
ON Semiconductor
Description:
OPTOISO 5.3KV DARL W/BASE 6DIP
Lifecycle:
New from this manufacturer.
Delivery:
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