BLM02PX100SN1D Datasheet N0604N-S19-AY, BLM21AG471SN1D, BLM02PX600SN1D | P1-P3

R07DS0850EJ0100 Rev.1.00 Page 1 of 6

Aug 27, 2012

Data Sheet

N0604N

N-channel MOSFET

60 V, 82 A, 6.5 mΩ

Description

The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

• Low on-state resistance

R

DS (on)

= 6.5 mΩ MAX. (V

GS

= 10 V, I

D

= 41 A)

• Low input capacitance

C

iss

= 4150 pF TYP. (V

DS

= 25 V, V

GS

= 0 V)

• High current

I

D(DC)

= ±82 A

• RoHS Compliant

Ordering Information

Part No. Lead Plating Packing Package

N0604N-S19-AY

∗

1

Pure Sn (Tin) Tube

50 p/tube

TO-220

1.9 g TYP.

Note:

∗

1. Pb-free (This product does not contain Pb in the external electrode.)

Absolute Maximum Ratings (T

A

= 25°C, all terminals are connected)

Item Symbol Ratings Unit

Drain to Source Voltage (V

GS

= 0 V) V

DSS

60 V

Gate to Source Voltage (V

DS

= 0 V) V

GSS

±20 V

Drain Current (DC) I

D(DC)

±82 A

Drain Current (pulse)

∗

1

I

D(pulse)

±200 A

Total Power Dissipation (T

C

= 25°C) P

T1

116 W

Total Power Dissipation (T

A

= 25°C) P

T2

1.5 W

Channel Temperature T

ch

150 °C

Storage Temperature T

stg

−55 to +150 °C

Single Avalanche Current

∗

2

I

AS

35 A

Single Avalanche Energy

∗

2

E

AS

125 mJ

Thermal Resistance

Channel to Case (Drain) Thermal Resistance R

th(ch-C)

1.08 °C/W

Channel to Ambient Thermal Resistance

∗

2

R

th(ch-A)

83.3 °C/W

Notes:

∗

1. PW ≤ 10

μ

s, Duty Cycle ≤ 1%

∗

2. Starting T

ch

= 25°C, R

G

= 25 Ω, V

DD

= 30 V, V

GS

= 20 → 0 V, L = 100

μ

H

R07DS0850EJ0100

Rev.1.00

Aug 27, 2012

N0604N Chapter Title

R07DS0850EJ0100 Rev.1.00 Page 2 of 6

Aug 27, 2012

Electrical Characteristics (T

A

= 25°C, all terminals are connected)

Item Symbol MIN. TYP. MAX. Unit Test Conditions

Zero Gate Voltage Drain Current I

DSS

1

μ

A V

DS

= 60 V, V

GS

= 0 V

Gate Leakage Current I

GSS

±100 nA V

GS

= ±20 V, V

DS

= 0 V

Gate to Source Cut-off Voltage V

GS(off)

2.0 4.0 V V

DS

= 10 V, I

D

= 1 mA

Forward Transfer Admittance

∗

1

| y

fs

| 30 S V

DS

= 5 V, I

D

= 41 A

Drain to Source On-state

Resistance

∗

1

R

DS(on)

5.1 6.5 mΩ V

GS

= 10 V, I

D

= 41 A

Input Capacitance C

iss

4150 pF V

DS

= 25 V,

Output Capacitance C

oss

310 pF V

GS

= 0 V,

Reverse Transfer Capacitance C

rss

165 pF f = 1 MHz

Turn-on Delay Time t

d(on)

24 ns V

DD

= 30 V, I

D

= 41 A,

Rise Time t

r

8 ns V

GS

= 10 V,

Turn-off Delay Time t

d(off)

64 ns R

G

= 0 Ω

Fall Time t

f

7 ns

Total Gate Charge Q

G

75 nC V

DD

= 48 V,

Gate to Source Charge Q

GS

21 nC V

GS

= 10 V,

Gate to Drain Charge Q

GD

21 nC I

D

= 82 A

Body Diode Forward Voltage

∗

1

V

F(S–D)

1.5 V I

F

= 82 A, V

GS

= 0 V

Reverse Recovery Time t

rr

38 ns

Reverse Recovery Charge Q

rr

39 nC

I

F

= 82 A, V

GS

= 0 V,

di/dt = 100 A/

μ

s

Note:

∗

1. Pulsed

TEST CIRCUIT 3 GATE CHARGE

V

GS

= 20 → 0 V

PG.

R

G

= 25 Ω

50 Ω

D.U.T.

L

V

DD

TEST CIRCUIT 1 AVALANCHE CAPABILITY

PG.

D.U.T.

R

L

V

DD

TEST CIRCUIT 2 SWITCHING TIME

R

G

PG.

I

G

= 2 mA

50 Ω

D.U.T.

R

L

V

DD

I

D

V

DD

I

AS

V

DS

BV

DSS

Starting T

ch

V

GS

0

τ = 1 s

Duty Cycle ≤ 1%

τ

V

GS

Wave Form

V

DS

Wave Form

V

GS

V

DS

10%

0

90%

V

GS

V

DS

t

on

t

off

t

d(on)

t

r

t

d(off)

t

f

10% 10%

μ

N0604N Chapter Title

R07DS0850EJ0100 Rev.1.00 Page 3 of 6

Aug 27, 2012

Typical Characteristics (T

A

= 25°C)

DERATING FACTOR OF FORWARD BIAS SAFE

OPERATING AREA

TOTAL POWER DISSIPATION vs.

CASE TEMPERATURE

dT - Percentage of Rated Power - %

0

20

40

60

80

100

120

140

0 25 50 75 100 125 150 175

T

C

- Case Temperature - °C

P

T

- Total Power Dissipation - W

0

50

100

150

0 25 50 75 100 125 150 175

T

C

- Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

I

D

- Drain Current - A

0.1

1

10

100

1000

0.1 1 10 100

P

W

=

1

0

μ

s

1

m

s

T

C

= 25°C

Single Pulse

R

D

S

(

o

n

)

L

i

m

i

t

e

d

I

DC(pulse)

= 200 A

Power Dissipation Limited

DC

I

DC

(

DC

)

= 82 A

10 ms

V

DS

- Drain to Source Voltage - V

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

r

th(t)

- Transient Thermal Resistance - °C/W

0.01

0.1

1

10

100

1000

R

th(ch-A)

= 83.3 °C/W

Single pulse

R

th(ch-C)

= 1.08 °C/W

PW - Pulse Width - s

0.1 m 1 m 10 m 100 m 1 10 100 1000

BLM02PX100SN1D

BLM02PX100SN1D

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