2SD2227STPW Datasheet 2SD2227STPW | P1-P3

2SD2707

/

2SD2654

/

2SD2351

/

2SD2226K

/

2SD2227S

Transistors

Rev.A 1/3

General Purpose Transistor (50V, 0.15A)

2SD2707

/

2SD2654

/

2SD2351

/

2SD2226K

/

2SD2227S

zFeatures

1) High DC current gain.

2) High emitter-base voltage. (V

CBO=12V)

3) Low saturation voltage.

(Typ. V

CE(sat)=0.3V at IC/IB=50mA/5mA)

zAbsolute maximum ratings (Ta=25°C)

Storage temperature

Junction temperature

Collector current

Emitter-base voltage

Collector-emitter voltage

Collector-base voltage

Collector power

dissipation

Parameter Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

Tj

Tstg

Limits

60

50

12

0.15

0.2

0.15

150

−55 to +150

Unit

V

A (DC)

A (Pulse)

∗

W

0.3

2SD2351, 2SD2226K

2SD2654, 2SD2707

2SD2227S

°C

∗Single

pulse Pw=100ms

zPackaging specifications and h

FE

Type

2SD2351

UMT3

VW

BJ

∗

T106

3000

2SD2654

EMT3

VW

BJ

∗

TL

3000

2SD2707

VMT3

VW

BJ

∗

T2L

8000

2SD2226K

SMT3

VW

BJ

∗

T146

3000

2SD2227S

SPT

VW

−

TP

5000

∗

Denotes

h

FE

package

h

FE

Marking

Code

Basic ordering unit (pleces)

zExternal dimensions (Unit : mm)

(1) Emitter

(2) Base

(3) Collector

(1) Base

(2) Emitter

(3) Collector

0.7

0.15

0.1Min.

0.55

0~0.1

0.2

1.6

1.0

0.3

0.8

(

2

)

0.5 0.5

(

3

)

0.2

(

1

)

(1) Emitter

(2) Base

(3) Collector

Each lead has same dimensions

1.25

2.1

0.3

0.15

0~0.1

0.1Min.

(

3

)

0.9

0.7

0.2

0.65

(

2

)

2.0

1.3

(

1

)

0.65

ROHM : SMT3

EIAJ : SC-59

(1) Emitter

(2) Base

(3) Collector

0.8

0.15

0~0.1

0.3Min.

1.1

(

2

)

(

1

)

2.8

1.6

0.4

(

3

)

2.9

1.9

0.95 0.95

ROHM : SPT

EIAJ : SC-72

(1) Emitter

(2) Collector

(3) Base

Taping specifications

0.45

2.5

(

1

) (

2

) (

3

)

(

15Min.

)

5

3

3Min.

0.45

0.5

42

ROHM : EMT3

EIAJ : SC-75A

ROHM : EMT3

ROHM : UMT3

EIAJ : SC-70

2SD2654

2SD2707

2SD2351

2SD2226K

2SD2227S

(3)

0.32

0.8

1.2

0.13

0.5

0.22

0.4 0.4

1.2

0.80.2 0.2

(

2

)

(

1

)

2SD2707

/

2SD2654

/

2SD2351

/

2SD2226K

/

2SD2227S

Transistors

Rev.A 2/3

zElectrical characteristics (Ta = 25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

f

T

Cob

60

50

12

−

250

3.5

−

0.3

−

V

µA

V

MHz

pF

I

C

=10µA

I

C

=1mA

I

E

=10µA

V

CB

=50V

V

EB

=12V

I

C

/I

B

=50mA/5mA

V

CE

/I

C

=5V/1mA

h

FE

820

−

2700

−

∗

V

CE

=5V, I

E

=−10mA, f=100MHz

V

CB

=5V, I

E

=0A, f=1MHz

Output capacitance

Transition frequency

Collector-emitter saturation voltage

Emitter cutoff current

Collector cutoff current

Emitter-base breakdown voltage

Collector-emitter breakdown voltage

Collector-base breakdown voltage

DC current transfer ratio

∗ Measured using pulse current.

zElectrical characteristics curves

0

0.20.1 0.3 0.4

0.4

0.8

1.2

1.6

2.0

0.5

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.1 Grounded emitter output

characteristics ( Ι )

COLLECTOR CURRENT : I

C

(mA)

Ta=25°C

2.0µA

1.2µA

1.0µA

0.8µA

0.6µA

0.4µA

0.2µA

I

B

=0

1.8µA

1.6µA

1.4µA

0

841216

40

80

120

160

200

020

0 0.40.2

0.2

0.5

0.6 0.8 1.0

1

2

5

20

10

50

100

200

1.41.2

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.3 Grounded emitter propagation

characteristics

COLLECTOR CURRENT : I

C

(mA)

V

CE

=5V

Ta=100

°

C

25°

C

−

25

°C

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.2 Grounded emitter output

characteristics ( ΙΙ )

COLLECTOR CURRENT : I

C

(mA)

500µA

450µA

400µA

350µA

250µ

A

200

µA

150

µ

A

100µ

A

50µA

I

B

=0

Ta=25°C

Measured

using pulse current

300µA

0.2 1 2 50.5 10 20 50 100

10000

10

20

50

100

200

500

1000

2000

5000

200

COLLECTOR CURRENT : I

C

(mA)

Fig.4 DC current gain vs.

collector current ( Ι )

DC CURRENT GAIN : h

FE

Ta=25°C

Measured

using pulse current

V

CE

=10V

5V

3V

0.2 1 2 50.5 10 20 50 100

10000

10

20

50

100

200

500

1000

2000

5000

200

COLLECTOR CURRENT : I

C

(mA)

Fig.5 DC current gain vs.

collector current ( ΙΙ )

DC CURRENT GAIN : h

FE

V

CE

=5V

Measured

using pulse current

Ta=100

°

C

25

°

C

−25

°

C

12 50.5 10 20 50 100

1000

1

2

5

10

20

50

100

200

500

0.2 200

COLLECTOR CURRENT : IC (mA)

Fig.6 Collector-emitter saturation voltage

vs. collector current ( Ι )

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(mV)

Ta=25

°C

I

C

/

I

B

=50

20

10

2SD2707

/

2SD2654

/

2SD2351

/

2SD2226K

/

2SD2227S

Transistors

Rev.A 3/3

0.2 1 2 50.5 10 20 50 100

1000

1

2

5

10

20

50

100

200

500

200

COLLECTOR CURRENT : IC (mA)

Fig.7 Collector-emitter saturation voltage

vs. collector current ( ΙΙ )

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(mV)

I

C

/

I

B

=10

Ta=100°C

25°C

−25°C

0.2 1 2 50.5 10 20 50 100

10000

10

20

50

100

200

500

1000

2000

5000

200

COLLECTOR CURRENT : I

C

(mA)

Fig.8 Base-emitter saturation voltage

vs. collector current ( Ι )

COLLECTOR SATURATION VOLTAGE : V

BE(sat)

(mV)

Ta=25

°C

I

C

/I

B

=10

20

50

0.2 1 2 50.5 10 20 50 100

10000

10

20

50

100

200

500

1000

2000

5000

200

COLLECTOR CURRENT : I

C

(mA)

Fig.9 Base-emitter saturation voltage

vs. collector current ( ΙΙ )

COLLECTOR SATURATION VOLTAGE : V

BE(sat)

(mV)

I

C

/I

B

=10

Ta=

−25°C

100°C

25°C

−2 −5 −10 −20 −50 −100−200 −500

1000

1

2

5

10

20

50

100

200

500

−1 −1000

EMITTER CURRENT : I

E

(mA)

Fig.10 Gain bandwidth product

vs. emitter current

TRANSITION FREQUENCY : f

T

(MHz)

Ta=25°

C

V

CE

=5V

Measured

using pulse current

0.2 0.5 1 2 5 10 20 50

1000

1

2

5

10

20

50

100

200

500

0.1 100

COLLRCTOR TO BASE VOLTAGE : V

CB

(V)

Fig.11 Collector output capacitance

vs. collector-base voltage

COLLECTOR OUTPUT CAPACITANCE : C

ob

(pF)

Ta=25°

C

f=1MHz

I

E

=0A

0.02 0.05 0.1 0.2 0.5 1 2 5

100

0.1

0.2

0.5

1

2

5

10

20

50

0.01 10

I

B

(mA)

Fig.12 Output on resistance

vs. base current

Ron : (Ω)

Ta=25

°

C

f=1kHz

V

i

=100mV(rms)

R

L

=1k

Ω

2SD2227STPW

2SD2227STPW

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