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Document Number: 62852
S13-1162-Rev. A, 13-May-13
Vishay Siliconix
SiSS23DN
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a.Surface mounted on 1" x 1" FR4 board.
b.Maximum under steady state conditions is 63 °C/W.
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
d. t = 100 µs.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, b
t 10 s R
thJA
21 26
°C/W
Maximum Junction-to-Case (Drain) Steady State R
thJC
1.7 2.2
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= - 250 µA - 20 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= - 250 µA
- 12
mV/
°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
3.4
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA - 0.4 - 0.9 V
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 8 V ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= - 20 V, V
GS
= 0 V - 1
µA
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C - 10
On-State Drain Current
a
I
D(on)
V
DS
- 5 V, V
GS
= - 4.5 V - 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 20 A 0.0035 0.0045
V
GS
= - 2.5 V, I
D
= - 10 A 0.0051 0.0063
V
GS
= - 1.8 V, I
D
= - 10 A 0.0081 0.0115
Forward Transconductance
a
g
fs
V
DS
= - 10 V, I
D
= - 20 A 44 S
Dynamic
b
Input Capacitance C
iss
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
8840
pFOutput Capacitance C
oss
835
Reverse Transfer Capacitance C
rss
900
Total Gate Charge Q
g
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 20 A 195 300
nC
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 20 A
93 140
Gate-Source Charge Q
gs
12
Gate-Drain Charge Q
gd
21
Gate Resistance R
g
f = 1 MHz 0.5 2.6 5.2
Tur n - O n D e l ay Time t
d(on)
V
DD
= - 10 V, R
L
= 1
I
D
- 10 A, V
GEN
= - 4.5 V, R
g
= 1
45 90
ns
Rise Time t
r
50 100
Turn-Off DelayTime t
d(off)
140 280
Fall Time t
f
50 100
Tur n - O n D e l ay T im e t
d(on)
V
DD
= - 10 V, R
L
= 1
I
D
- 10 A, V
GEN
= - 10 V, R
g
= 1
15 30
Rise Time t
r
510
Turn-Off DelayTime t
d(off)
150 300
Fall Time t
f
40 80
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
C
= 25 °C - 50
c
A
Pulse Diode Forward Current
d
I
SM
- 200
Body Diode Voltage V
SD
I
F
= - 10 A - 0.8 - 1.2 V
Body Diode Reverse Recovery Time t
rr
I
F
= - 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
30 60 ns
Body Diode Reverse Recovery Charge Q
rr
15 30 nC
Reverse Recovery Fall Time t
a
16
ns
Reverse Recovery Rise Time t
b
14
