CM1622
Rev.2 | Page 4 of 12 | www.onsemi.com
ELECTRICAL OPERATING CHARACTERISTICS
(NOTE1)
SYMBOL PARAMETER CONDITIONS MIN
TYP
MAX
UNITS
R Resistance I
R
= 20mA 85 100 115
Ω
C
TOTAL
Total Channel Capacitance At 2.5VDC Reverse Bias, 1MHz,
30mVAC
20 25 30 pF
C Capacitance C At 2.5VDC Reverse Bias, 1MHz,
30mVAC
12.5 pF
V
DIODE
Standoff Voltage
I
DIODE
= 10μA
6.0 V
I
LEAK
Diode Leakage Current (reverse bias)
V
DIODE
= +3.3V
0.01 0.2
μA
V
SIG
Signal Clamp Voltage
I
LOAD
= 1.0mA 6.0 7.0 8.0 V
V
ESD
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-
2 Level 4
See Note 2
±30
±15
kV
kV
R
DYN
Dynamic Resistance
Positive
Negative
2.3
0.9
Ω
Ω
f
C
Cut-off Frequency
Z
SOURCE
= 50Ω, Z
LOAD
= 50Ω
Channel R = 100Ω,
Channel C = 25pF
115
MHz
A
1GHz
Absolute Attenuation @ 1GHz from 0dB
Level
Z
SOURCE
= 50Ω, Z
LOAD
= 50Ω,
DC Bias = 0V;
See Notes 1 and 3.
-35 dB
A
800MHz - 6GHz
Absolute Attenuation @ 800MHz to
6GHz from 0dB Level
Z
SOURCE
= 50Ω, Z
LOAD
= 50Ω,
DC Bias = 0V;
See Notes 1 and 3.
30 dB
Note 1: T
A
=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Attenuation / RF curves characterized by a network analyzer using microprobes.
