Philips Semiconductors
PSMN003-30 series
N-channel enhancement mode field-effect transistor
Product data Rev. 01 — 23 October 2001 2 of 13
9397 750 08316
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
DS
drain-source voltage (DC) T
j
=25to175°C − 30 V
I
D
drain current (DC) T
mb
=25°C; V
GS
=10V − 75 A
P
tot
total power dissipation T
mb
=25°C − 230 W
T
j
junction temperature − 175 °C
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
= 25 A; T
j
=25°C 2.4 2.8 mΩ
V
GS
=5V; I
D
= 25 A; T
j
=25°C 3.3 4 mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) T
j
=25to175°C − 30 V
V
DGR
drain-gate voltage (DC) T
j
=25to175°C; R
GS
=20kΩ−30 V
V
GS
gate-source voltage (DC) −±20 V
V
GSM
gate-source voltage t
p
≤ 50 µs; pulsed;
duty cycle 25 %; T
j
≤ 150 °C
−±25 V
I
D
drain current (DC) T
mb
=25°C; V
GS
=10V;Figure 2 and 3 − 75 A
T
mb
= 100 °C; V
GS
=10V;Figure 2 − 75 A
I
DM
peak drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs; Figure 3 − 400 A
P
tot
total power dissipation T
mb
=25°C; Figure 1 − 230 W
T
stg
storage temperature −55 +175 °C
T
j
operating junction temperature −55 +175 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
mb
=25°C − 75 A
I
SM
peak source (diode forward) current T
mb
=25°C; pulsed; t
p
≤ 10 µs − 400 A
Avalanche ruggedness
E
AS
non-repetitive avalanche energy unclamped inductive load;
I
D
=75A;t
p
= 0.1 ms; V
DD
=15V;
R
GS
=50Ω; V
GS
= 10 V; starting T
j
=25°C
− 500 mJ
I
AS
non-repetitive avalanche current unclamped inductive load;
V
DD
=15V;R
GS
=50Ω; V
GS
=10V;
starting T
j
=25°C
− 75 A
