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NHPM120T3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 0
1 Publication Order Number:
NHPM120/D
NHPM120, NRVHPM120
Surface Mount
Ultra Fast Power Rectifier
POWERMITE
®
Power Surface Mount
Package
This ultrafast POWERMITE provides soft recovery fast switching
performance in a compact thermally efficient package. The advanced
packaging techniques provide for a very efficient micro−miniature
space−saving surface mount rectifier. With its unique heatsink design,
the POWERMITE offers thermal performance similar to the SMA
while being 50% smaller in footprint area.
Features
• Fast Soft Switching for Reduced EMI and Higher Efficiency
• Low Profile − Maximum Height of 1.1 mm
• Small Footprint − Footprint Area of 8.45 mm
2
• Supplied in 12 mm Tape and Reel
• Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
• POWERMITE is JEDEC Registered as D0−216AA
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 16.3 mg (Approximately)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
• MSL 1
Applications
• Automotive LED Lighting
• Engine Control
• Freewheeling Diode Where Space is at a Premium
• Flat Panel Display
ORDERING INFORMATION
ULTRAFAST
RECTIFIER
1.0 AMPERE, 200 VOLTS
http://onsemi.com
Device Package Shipping
†
NHPM120T3G POWERMITE
(Pb−Free)
12000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
POWERMITE
CASE 457
CATHODE
ANODE
MARKING DIAGRAM
M = Date Code
P12 = Device Code
G = Pb−Free Package
M
P12G
12
NRVHPM120T3G POWERMITE
(Pb−Free)
12000 / Tape &
Reel
NHPM120, NRVHPM120
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
200 V
Average Rectified Forward Current
(T
L
= 165°C)
I
O
1.0 A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz) T
L
= 165°C
I
FRM
2.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
30 A
Storage and Operating Junction Temperature Range (Note 1) T
stg
, T
J
−65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Y
JCL
12 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JA
75 °C/W
Thermal Resistance, Junction−to−Ambient (Note 3)
R
q
JA
260 °C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 4)
(I
F
= 1.0 A, T
J
= 25°C)
(I
F
= 2.0 A, T
J
= 25°C)
(I
F
= 1.0 A, T
J
= 125°C)
(I
F
= 2.0 A, T
J
= 125°C)
V
F
1.0
1.1
0.85
0.95
V
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
0.5
25
mA
Reverse Recovery Time
I
F
= 1.0 A, V
R
= 30 V, dl/dt = 50 A/ms, T
J
= 25°C
t
rr
25 ns
Reverse Recovery Time
I
F
= 1.0 A, V
R
= 30 V, dl/dt = 50 A/ms, T
J
= 50°C
t
rr
50 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm
2
copper pad size (Approximately 1 in
2
) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm
2
copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
NHPM120, NRVHPM120
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
1.10.90.70.50.30.1
0.001
1
10
100
1.20.80.60.20
0.001
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V) V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
180120100806040200
1.E−12
2001401208040200
Figure 5. Typical Junction Capacitance
V
R
, REVERSE VOLTAGE (V)
0
10
100
1000
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
1.4
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
140 200
1.E−11
1.E−09
1.E−08
1.E−06
1.E−05
1.E−03
60 100
1.E−08
1.E−07
1.E−05
1.E−03
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
20 200
T
A
= 175°C
T
A
= 125°C
T
A
= −40°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= −40°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
1.E−04
Figure 6. Current Derating
T
C
, CASE TEMPERATURE (°C)
10060 160140200
0
0.5
1.5
2.0
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
40 120
Square Wave
DC
R
q
JC
= 12°C/W
T
J
= 25°C
1.5 0.4 1.0
160
T
A
= 150°C
T
A
= 175°C
T
A
= 175°C
0.1
0.01
0.1
0.01
T
A
= −40°C
1.E−10
1.E−07
1.E−04
160
T
A
= 150°C
T
A
= 125°C
T
A
= 25°C
T
A
= 175°C
T
A
= −40°C
180
40 60 80 100 120 140 160 180
1.0
80 180
1.E−06
1.E−09
1.E−10
1.3
1
P1-P3P4-P5

NHPM120T3G

Mfr. #:
Buy NHPM120T3G
Manufacturer:
ON Semiconductor
Description:
Rectifiers PUF1A 200V IN PWRMIT
Lifecycle:
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