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DPLS160-7

P1-P3P4-P4
DPLS160
LOW V
CE(SAT)
PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DNLS160)
• Surface Mount Package Suited for Automated Assembly
• Lead Free/RoHS Compliant (Note 1)
• "Green Device" (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
NEW PRODUCT
SOT-23
E
B
C
Schematic and Pin Configuration
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
-80 V
Collector-Emitter Voltage
V
CEO
-60 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current - Continuous
I
C
-1 A
Peak Pulse Collector Current
I
CM
-2 A
Base Current (DC)
I
B
-300 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25°C P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 3) @ T
A
= 25°C
R
θ
JA
417
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS31389 Rev. 4 - 2 1 of 4
www.diodes.com
DPLS160
© Diodes Incorporated
Please click here to visit our online spice models database.
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
-80
⎯ ⎯
V
I
C
= -100μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-60
⎯ ⎯
V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
⎯ ⎯
V
I
E
= -100μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯ ⎯
-100
-50
nA
μA
V
CB
= -60V, I
E
= 0
V
CB
= -60V, I
E
= 0, T
A
= 150°C
Collector Cutoff Current
I
CES
⎯ ⎯
-100 nA
V
CE
= -60V, V
BE
= 0
Emitter Cutoff Current
I
EBO
⎯ ⎯
-100 nA
V
EB
= -5V, I
C
= 0
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
200
150
100
325
250
180
⎯
⎯
⎯
V
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
= -500mA
V
CE
= -5V, I
C
= -1A
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
⎯
⎯
-90
-90
-160
-160
-175
-330
mV
I
C
= -100mA, I
B
= -1mA
I
C
= -500mA, I
B
= -50mA
I
C
= -1A, I
B
= -100mA
Collector-Emitter Saturation Resistance
R
CE(SAT)
⎯
160 330 mΩ
I
C
= -1A, I
B
= -100mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
-0.95 -1.1 V
I
C
= -1A, I
B
= -50mA
Base-Emitter Turn On Voltage
V
BE(ON)
⎯
-0.82 -0.9 V
V
CE
= -5V, I
C
= -1A
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
10 15 pF
V
CB
= -10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
150 220
⎯
MHz
V
CE
= -10V, I
C
= -50mA, f = 100MHz
NEW PRODUCT
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
0
50
100
25 50
75
100 125
150
175
200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Maximum Power Dissipation vs.
Ambient Temperature
A
150
200
250
300
350
400
0
0
0.3
0.6
0.9
1.2
1.5
01234
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
-I ,
5
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(A)
C
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
I = -2mA
B
I = -4mA
B
I = -6mA
B
I = -8mA
B
I = -10mA
B
DS31389 Rev. 4 - 2 2 of 4
www.diodes.com
DPLS160
© Diodes Incorporated
0
200
400
600
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
Fig. 3 Typical DC Current Gain vs. Collector Current
0
0.1
0.2
0.3
0.4
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
-V , COLLECTOR EMITTER
SATURATION VOLTAGE (V)
CE(SAT)
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
-V , BASE EMITTER TURN-ON VOLTAGE (V)
BE(ON)
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
-V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N V
O
L
T
A
G
E (V)
BE(SAT)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
T = 85°C
A
T = 150°C
A
T = 25°C
A
T = -55°C
A
I/I = 20
CB
0
20
40
60
80
100
120
0.01 0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
CAPACITANCE (pF)
Fig. 7 Typical Total Capacitance
f = 1MHz
C
ibo
C
obo
0
50
100
150
200
250
0102030405060708090100
I , COLLECTOR CURRENT (mA)
C
f , CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
T
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
V = -10V
f = 100MHz
CE
NEW PRODUCT
DS31389 Rev. 4 - 2 3 of 4
www.diodes.com
DPLS160
© Diodes Incorporated
P1-P3P4-P4

DPLS160-7

Mfr. #:
Buy DPLS160-7
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP .3W
Lifecycle:
New from this manufacturer.
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