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2SK3827

P1-P3P4-P4
2SK3827
No.8244-1/4
Features
• Low ON-resistance.
•
4V drive.
•
Ultrahigh-speed switching.
•
Motor drive, DC / DC converter.
•
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
DSS
100 V
Gate-to-Source Voltage V
GSS
±20 V
Drain Current (DC) I
D
40 A
Drain Current (Pulse) I
DP
PW≤10µs, duty cycle≤1% 160 A
Allowable Power Dissipation P
D
1.75 W
Tc=25°C60W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 E
AS
190 mJ
Avalanche Current *2 I
AV
40 A
Note : *1 V
DD
=20V, L=200µH, I
AV
=40A
*2 L≤200µH, Single pulse
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions
min typ max
Unit
Drain-to-Source Breakdown Voltage V
(BR)DSS
I
D
=1mA, V
GS
=0 100 V
Zero-Gate Voltage Drain Current I
DSS
V
DS
=100V, V
GS
=0 1 µA
Gate-to-Source Leakage Current I
GSS
V
GS
= ±16V, V
DS
=0 ±10 µA
Cutoff Voltage V
GS
(off) V
DS
=10V, I
D
=1mA 1.2 2.6 V
Forward Transfer Admittance
yfs
V
DS
=10V, I
D
=20A 18.5 31 S
Static Drain-to-Source On-State Resistance
R
DS
(on)1 I
D
=20A, V
GS
=10V 26 34 mΩ
R
DS
(on)2 I
D
=20A, V
GS
=4V 31 43 mΩ
Marking : K3827 Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8244
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
31005QA TS IM TB-00001203
2SK3827
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK3827
No.8244-2/4
Continued from preceding page.
Ratings
Parameter Symbol Conditions
min typ max
Unit
Input Capacitance Ciss V
DS
=20V, f=1MHz 4200 pF
Output Capacitance Coss V
DS
=20V, f=1MHz 300 pF
Reverse Transfer Capacitance Crss V
DS
=20V, f=1MHz 250 pF
Turn-ON Delay Time t
d
(on) See specified Test Circuit. 30 ns
Rise Time t
r
See specified Test Circuit. 68 ns
Turn-OFF Delay Time t
d
(off) See specified Test Circuit. 300 ns
Fall Time t
f
See specified Test Circuit. 110 ns
Total Gate Charge Qg V
DS
=50V, V
GS
=10V, I
D
=40A 79 nC
Gate-to-Source Charge Qgs V
DS
=50V, V
GS
=10V, I
D
=40A 14 nC
Gate-to-Drain “Miller” Charge Qgd V
DS
=50V, V
GS
=10V, I
D
=40A 18 nC
Diode Forward Voltage V
SD
I
S
=40A, V
GS
=0 1.0 1.2 V
Package Dimensions
unit : mm
2052C
Switching Time Test Circuit Avalanche Resistance Test Circuit
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220
10.2
5.1
3.6
18.0
5.6
2.7
6.3
15.1
1.2
14.0
0.8
1.3
4.5
0.4
2.55
2.55
2.7
123
PW=10µs
D.C.≤1%
P. G
50Ω
G
S
D
I
D
=20A
R
L
=2.5Ω
V
DD
=50V
V
OUT
2SK3827
V
IN
10V
0V
V
IN
50Ω
10V
0V
≥50Ω
V
DD
L
2SK3827
2SK3827
No.8244-3/4
R
DS
(on) -- V
GS
IT08880
R
DS
(on)
-- Tc
IT08881
I
D
-- V
DS
IT08878
I
D
-- V
GS
IT08879
0
10
80
60
70
50
40
30
20
--50 --25 150
03010 15 20 255
Ciss, Coss, Crss -- V
DS
1000
100
10000
IT08885
IT08883
I
F
-- V
SD
IT08882
0.1 1.0
23 57
3
10
100
1.0
y
fs-- I
D
1.51.20.60.3 0.90
0.01
0.1
1.0
10
100
5
7
3
2
5
7
3
2
5
7
3
2
5
7
3
2
7
5
5
7
2
3
5
7
2
3
2
10 100
23 57 7352
3456789210
0
30
40
50
70
60
20
10
1.51.00.5 2.0 2.5 4.03.0 3.50
0
10
80
60
70
50
40
30
20
0
10
80
60
70
50
40
30
20
1.51.00.5 2.0 2.5 5.04.03.0 3.5 4.50
0 25 50 75 100 125
7
5
2
3
7
5
6V
Tc=25°C
25°C
--25
°
C
25°C
Tc= --25
°
C
75
°
C
Tc=
75
°
C
I
D
=20A
Tc=75°C
25°C
--
25°C
I
D
=20A, V
GS
=4V
I
D
=20A, V
GS
=10V
Tc= --25
°C
75
°
C
25
°
C
V
DS
=10V
Tc=
75
°
C
25
°
C
--
25
°
C
V
GS
=0
Coss
Ciss
Crss
IT08884
0.1 1.0
23 5723 57 23 5
10
7
100
100
10
1000
3
5
7
2
2
3
5
7
SW Time -- I
D
t
d
(off)
t
d
(on)
V
DD
=50V
V
GS
=10V
V
GS
=3V
4V
V
DS
=10V
t
f
10V
8V
f=1MHz
t
r
Drain-to-Source Voltage, V
DS
-- V
Drain Current, I
D
-- A
Gate-to-Source Voltage, V
GS
-- V
Drain Current, I
D
-- A
Gate-to-Source Voltage, V
GS
-- V
Case Temperature, Tc --
°C
Forward Transfer Admittance,
y
fs -- S
Static Drain-to-Source
On-State Resistance, R
DS
(on) -- mΩ
Static Drain-to-Source
On-State Resistance, R
DS
(on) -- mΩ
Drain Current, I
D
-- A
Drain Current, I
D
-- A
Switching Time, SW Time -- ns
Drain-to-Source Voltage, V
DS
-- V
Ciss, Coss, Crss -- pF
Diode Forward Voltage, V
SD
-- V
Forward Current, I
F
-- A
P1-P3P4-P4

2SK3827

Mfr. #:
Buy 2SK3827
Manufacturer:
ON Semiconductor
Description:
MOSFET NCH 4V DRIVE SERIES
Lifecycle:
New from this manufacturer.
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